113 Result(s)
within
A. V. Dvurechenskii
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Article
Measurement of emissivity of partially transparent materials at high temperatures by high-speed spectrometry method
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Article
Investigation of spectral absorption coefficient of KI and KV quartz glasses in IR region to upper temperature limit
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Article
Formation of Double-Height Si(001) Steps by Sputtering with Xe Ions - A Computer Simulation
A study of the recently observed double-height Si(001) step formation by sputtering with low-energy Xe ions is presented. The modeling of the process has been separated in two stages: (i) Molecular dynamics (M...
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Article
Longitudinal conductivity of Ge/Si heterostructures with quantum dots
The conductance along an island layer of Ge quantum dots buried in silicon was investigated. The sizes of the islands varied in the range D ≈ 12−19 nm. It was found that the charge transport is characterized b...
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Article
Effects of pulsed irradiation by low-energy ions during homoepitaxy of silicon from a molecular beam
The change in the morphology of a Si(111) surface under pulsed irradiation by 145-eV Kr+ ions with a pulse duration of 0.5 s during epitaxy of silicon from a molecular beam is studied experimentally by RHEED. It ...
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Article
Photostimulated mesoscopic current fluctuations in a-Si based microstructures
Photostimulated two-level switchings of a vertical current are observed in thin (L=200 Å) amorphous silicon layers with a submicron electrical contact area (S=0.5×0.5 mm). The switching frequency increases with t...
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Article
Metal-insulator transition in amorphous Si1−c Mnc obtained by ion implantation
A metal-insulator transition (MIT) induced by a change in the impurity Mn concentration in a material with topological disorder — amorphous Si1−c Mnc — is investigated. It is found that near the critical point th...
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Article
Suppression of the fractal conductivity channel and superlocalization effects in porous a-Si:H
The temperature dependence of the hop** conductivity and the relaxation kinetics of the transient current in porous amorphous silicon are investigated after treatment in a hydrogen plasma at 200 °C. It is di...
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One-dimensional localization in porous a-Si1−c Mnc
The temperature dependence of the conductance of porous silicon doped with manganese up to densities corresponding to the metallic side of the Anderson transition is investigated. It is found that in the tempe...
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Article
Depth distribution of point defects in Si bombarded by high-energy N5+ and Si5+ ions
Electron spin resonance has been used to study the depth distribution of point defects in Si samples bombarded by N5+ (E=16 MeV) and Si5+ (E=26.8 MeV) ions at 175 and 300 K in the dose range (4–8)×1015 cm−2. It w...
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Mechanism of silicon epitaxy on porous silicon layers
The mechanism of silicon epitaxy on porous Si(111) layers is investigated by the Monte Carlo method. The Gilmer model of adatom diffusion extended to the case of arbitrary surface morphology is used. Vacancies...
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Article
Formation of zero-dimensional hole states during molecular-beam epitaxy of Ge on Si (100)
The characteristic features of electronic spectra in Ge/Si (100) heterostructures obtained by molecular-beam epitaxy are investigated by capacitance spectroscopy. It is observed that the self-organization of a...
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Article
Mechanism of structural changes of Si(111) surfaces subjected to low-energy ion pulses during molecular-beam epitaxy
Reflected high-energy electron diffraction (RHEED) and detection of the intensity oscillations of the specular reflection have been used to investigate morphological changes in Si(111) associated with the two-...
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Article
Anisotropic negative magnetoresistance in one-dimensional channels of porous silicon
It is found that the magnetoresistance of manganese-doped porous amorphous silicon in fields 0–5 T is negative and depends on the orientation of the magnetic field. The experimental curves of the magnetic-fiel...
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Chapter
Characterization of Porous Silicon Layers Containing A Buried Oxide Layer
We have developed new electrolyte solutions for high voltage electrochemical oxidation of porous silicon and have demonstrated their utility by fabricating porous silicon structures containing a buried oxide l...
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Chapter
Study of Porous Silicon Formation and Silicon-on-Porous Silicon Epitaxy (Computational Modelling)
By computer simulation the processes of porous silicon formation and of silicon-onporous silicon epitaxy are studied. The model of electrochemical etching is applied for p+Si and p-Si substrates and takes into ac...
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Chapter
Homoepitaxy on Porous Silicon with a Buried Oxide Layer: Full-Wafer Scale SOI
A new SOI technology is described which incorporates the technologies of porous silicon and molecular beam epitaxy. The principle of the method is to form a buried oxide layer by means of anodic oxidation of s...
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Article
Effects of low-energy ion beam action on Ge/Si heteroepitaxy from molecular beam
The evolution of the surface morphology of a pseudomorphic Ge film on Si upon irradiation with its low-energy (230 eV) ions during heteroepitaxy from molecular beam has been studied experimentally by reflectio...
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Article
Negative interband photoconductivity in Ge/Si heterostructures with quantum dots of the second type
It was found that irradiating an array of Ge nanoclusters in n-Si with light that induced interband transitions gave rise to negative photoconductivity. This result was explained by localization of equilibrium el...
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Article
Spatial distribution of elastic deformations in Ge/Si structures with quantum dots
A method is developed for calculating the elastic deformation in coherently strained heterostructures on the basis of the valence force field (VFF) model using the Green’s function of the “atomistic” elastic p...
