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  1. No Access

    Article

    Problem of optimal control in the system of semiconductor quantum points

    For the operation of spin information swap** in the system of two vertically superposed layers of tunnel-coupled semiconductor quantum points, a problem of optimization of the time function of control voltag...

    A. Yu. Gornov, A. V. Dvurechenskii, T. S. Zarodnyuk… in Automation and Remote Control (2011)

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    Chapter

    Characterization of Porous Silicon Layers Containing A Buried Oxide Layer

    We have developed new electrolyte solutions for high voltage electrochemical oxidation of porous silicon and have demonstrated their utility by fabricating porous silicon structures containing a buried oxide l...

    S. I. Romanov, A. V. Dvurechenskii… in Perspectives, Science and Technologies for… (2000)

  3. No Access

    Chapter

    Homoepitaxy on Porous Silicon with a Buried Oxide Layer: Full-Wafer Scale SOI

    A new SOI technology is described which incorporates the technologies of porous silicon and molecular beam epitaxy. The principle of the method is to form a buried oxide layer by means of anodic oxidation of s...

    S. I. Romanov, A. V. Dvurechenskii… in Perspectives, Science and Technologies for… (2000)