5 Result(s)
within
A. V. Dvurechenskii
Materials Science
Surfaces and Interfaces, Thin Films
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Chapter and Conference Paper
Ge/Si Nanostructures with Quantum Dots Grown by Ion-Beam-Assisted Heteroepitaxy
Scanning tunneling microscopy (STM) experiments were performed to study growth modes induced by hyperthermal Ge ion action during molecular-beam epitaxy (MBE) of Ge on Si(100). Continuous and pulsed ion-beams ...
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Article
Application of XAFS spectroscopy to studying the microstructure and electronic structure of quantum dots
Variations in the microscopic structural parameters of semiconductor nanoclusters (interatomic distances, coordination numbers, and types of neighboring atoms) under variation of the preparation conditions of ...
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Article
Effects of spatial ordering of quantum dot arrays from small-angle X-ray diffraction data under variation of growth parameters
The small angle X-ray diffraction method is applied to the system of germanium quantum dots in the silicon matrix prepared by molecular-beam epitaxy in self-organization mode using the Stranski-Krastanov techn...
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Article
The microstructure of vertically coupled quantum dots ensembles by EXAFS spectroscopy
The microstructure of samples containing Ge/Si, GaN/AlN, and InAs/AlAs (Ge, GaN, and InAs quantum dots (QDs) in the Si, AlN, and AlAs matrices, respectively) multilayer heterostructures has been investigated b...
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Article
Energy Spectrum of Charge Carriers in Elastically Strained Assemblies of Ge/Si Quantum Dots
The results of studying the energy spectrum of electrons and holes localized in second-type Ge/Si heterostructures with Ge quantum dots are presented. In such structures, holes are localized at Ge quantum dots...
