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  1. No Access

    Article

    Formation of Double-Height Si(001) Steps by Sputtering with Xe Ions - A Computer Simulation

    A study of the recently observed double-height Si(001) step formation by sputtering with low-energy Xe ions is presented. The modeling of the process has been separated in two stages: (i) Molecular dynamics (M...

    K.-H. Heinig, D. Stock, H. Boettger, V. A. Zinovyev… in MRS Online Proceedings Library (1993)

  2. No Access

    Chapter and Conference Paper

    Ge/Si Nanostructures with Quantum Dots Grown by Ion-Beam-Assisted Heteroepitaxy

    Scanning tunneling microscopy (STM) experiments were performed to study growth modes induced by hyperthermal Ge ion action during molecular-beam epitaxy (MBE) of Ge on Si(100). Continuous and pulsed ion-beams ...

    A. V. Dvurechenskii, J. V. Smagina… in Quantum Dots: Fundamentals, Applications, … (2005)

  3. No Access

    Article

    Simulating the nucleation and growth of Ge quantum dots on Si using high-efficiency algorithms

    Original approaches are presented for elucidating a microscopic mechanism of surface atomic diffusion and simulating the heteroepitaxial nanostructure growth on substrates with a complex relief. Using the mole...

    P. L. Novikov, A. V. Nenashev, S. A. Rudin, A. S. Polyakov… in Nanotechnologies in Russia (2015)