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  1. No Access

    Article

    Energy Spectrum of Charge Carriers in Elastically Strained Assemblies of Ge/Si Quantum Dots

    The results of studying the energy spectrum of electrons and holes localized in second-type Ge/Si heterostructures with Ge quantum dots are presented. In such structures, holes are localized at Ge quantum dots...

    A. A. Bloshkin, A. I. Yakimov… in Journal of Surface Investigation: X-ray, S… (2018)

  2. No Access

    Article

    Simulating the nucleation and growth of Ge quantum dots on Si using high-efficiency algorithms

    Original approaches are presented for elucidating a microscopic mechanism of surface atomic diffusion and simulating the heteroepitaxial nanostructure growth on substrates with a complex relief. Using the mole...

    P. L. Novikov, A. V. Nenashev, S. A. Rudin, A. S. Polyakov… in Nanotechnologies in Russia (2015)

  3. No Access

    Article

    The microstructure of vertically coupled quantum dots ensembles by EXAFS spectroscopy

    The microstructure of samples containing Ge/Si, GaN/AlN, and InAs/AlAs (Ge, GaN, and InAs quantum dots (QDs) in the Si, AlN, and AlAs matrices, respectively) multilayer heterostructures has been investigated b...

    S. B. Erenburg, S. V. Trubina, N. V. Bausk… in Journal of Surface Investigation. X-ray, S… (2011)

  4. No Access

    Article

    Effects of spatial ordering of quantum dot arrays from small-angle X-ray diffraction data under variation of growth parameters

    The small angle X-ray diffraction method is applied to the system of germanium quantum dots in the silicon matrix prepared by molecular-beam epitaxy in self-organization mode using the Stranski-Krastanov techn...

    L. M. Plyasova, I. Yu. Molina, N. P. Stepina… in Journal of Surface Investigation. X-ray, S… (2011)

  5. No Access

    Article

    Application of XAFS spectroscopy to studying the microstructure and electronic structure of quantum dots

    Variations in the microscopic structural parameters of semiconductor nanoclusters (interatomic distances, coordination numbers, and types of neighboring atoms) under variation of the preparation conditions of ...

    S. B. Erenburg, N. V. Bausk… in Journal of Surface Investigation. X-ray, S… (2007)

  6. No Access

    Chapter and Conference Paper

    Ge/Si Nanostructures with Quantum Dots Grown by Ion-Beam-Assisted Heteroepitaxy

    Scanning tunneling microscopy (STM) experiments were performed to study growth modes induced by hyperthermal Ge ion action during molecular-beam epitaxy (MBE) of Ge on Si(100). Continuous and pulsed ion-beams ...

    A. V. Dvurechenskii, J. V. Smagina… in Quantum Dots: Fundamentals, Applications, … (2005)

  7. No Access

    Chapter

    Study of Porous Silicon Formation and Silicon-on-Porous Silicon Epitaxy (Computational Modelling)

    By computer simulation the processes of porous silicon formation and of silicon-onporous silicon epitaxy are studied. The model of electrochemical etching is applied for p+Si and p-Si substrates and takes into ac...

    P. L. Novikov, L. N. Aleksandrov, A. V. Dvurechenskii… in Nanostructured Films and Coatings (2000)

  8. No Access

    Article

    Formation of Double-Height Si(001) Steps by Sputtering with Xe Ions - A Computer Simulation

    A study of the recently observed double-height Si(001) step formation by sputtering with low-energy Xe ions is presented. The modeling of the process has been separated in two stages: (i) Molecular dynamics (M...

    K.-H. Heinig, D. Stock, H. Boettger, V. A. Zinovyev… in MRS Online Proceedings Library (1993)