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  1. No Access

    Article

    Quantum Gates with Spin States in Continuous Microwave Field

    The physical basis of the method of implementing quantum logical operations in a continuous microwave field in a system of two electrons with different g-factors and a constant exchange interaction is develope...

    A. F. Zinovieva, A. V. Nenashev, A. A. Koshkarev… in Russian Microelectronics (2018)

  2. No Access

    Article

    SiGe quantum rings on the Si(100) surface

    Results of experimental studies of forming SiGe nanometer-size rings on the Si(100) surface by the molecular-beam epitaxy method are presented. Detailed shapes and size distributions of the grown nanorings are...

    P. A. Kuchinskaya, V. A. Zinovyev, A. V. Nenashev… in Russian Microelectronics (2012)

  3. No Access

    Chapter

    Characterization of Porous Silicon Layers Containing A Buried Oxide Layer

    We have developed new electrolyte solutions for high voltage electrochemical oxidation of porous silicon and have demonstrated their utility by fabricating porous silicon structures containing a buried oxide l...

    S. I. Romanov, A. V. Dvurechenskii… in Perspectives, Science and Technologies for… (2000)

  4. No Access

    Chapter

    Homoepitaxy on Porous Silicon with a Buried Oxide Layer: Full-Wafer Scale SOI

    A new SOI technology is described which incorporates the technologies of porous silicon and molecular beam epitaxy. The principle of the method is to form a buried oxide layer by means of anodic oxidation of s...

    S. I. Romanov, A. V. Dvurechenskii… in Perspectives, Science and Technologies for… (2000)