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  1. No Access

    Article

    Activation of Implanted Phosphorus Ions into Silicon by Followed Hydrogen Ion Implantations

    The activation of phosphorus implanted into n-type silicon (100) substrate by followed hydrogen ion(H+) implantation was studied by means of spreading resistance technique(SR), secondary ion mass spectroscopy(SIM...

    Y. Hasebe, H. Ohshima, T. Hattori, A. Usami, Y. Tokuda in MRS Online Proceedings Library (1995)

  2. No Access

    Article

    Microscopic Noncontact Electrical Evaluation for the Silicon-on-Insulator Layer with Voids

    We evaluate the electrical properties of the silicon-on-insulator (SOI) layer made by the wafer bonding using a noncontact laser beam induced conductivity/current (LBIC) method. Since the thickness of the SOI ...

    A. Usami, T. Nakai, S. Ishigami, T. Wada, K. Matsuki… in MRS Online Proceedings Library (1993)

  3. No Access

    Article

    Double Beam Photoconductivity Modulation System and its Application to the Characterization of a Process of Photoresist Removal

    A laser/microwave method using two lasers of different wavelengths for carrier injection is proposed to evaluate near surface regions. These lasers are a He-Ne (wavelength=633nm, penetration depth= ∼3μm) and a...

    A. Usami, H. Fujiwara, T. Nakai, K. Matsuki, T. Takeuchi… in MRS Online Proceedings Library (1992)

  4. No Access

    Article

    Evaluation Using a Noncontact Laser Beam Induced Conductivity/Current Method for the Silicon-on-Insulator Made by Wafer Bonding

    In this study, we evaluate the electrical characteristics of the silicon on insulator (SOI) layer made by the wafer bonding method using a photoconductivity modulation method, in other words, noncontact laser ...

    A. Usami, T. Nakai, H. Fujiwara, S. Ishigami, T. Wada… in MRS Online Proceedings Library (1992)

  5. No Access

    Article

    Characterization of Gasb-Based Alloy Semiconductors

    GaSb, AlxGa1-xSb, and AlxGa1-xSb epitaxial layers were grown by the liquid-phase epitaxy and characterized by photoluminescence, Raman spectroscopy, and double-crystal X-ray diffraction. The concentration of resi...

    H. Uekita, N. Kitamura, M. Ichimura, A. Usami, T. Wada in MRS Online Proceedings Library (1990)

  6. No Access

    Article

    Contactless Measurements of the Surface Recombination Velocity of P-N and High-Low (P-P+, N-N+) Junctions Fabricated by Rapid Thermal Processing

    A photoconductive decay curve is analyzed theoretically to determine the surface recombination velocity and the bulk lifetime separately. And it can be applied to experimental photoconductive decay curves usin...

    A. Usami, N. Yamada, K. Matsuki, T. Takeuchi, T. Wada in MRS Online Proceedings Library (1989)

  7. No Access

    Article

    Effects of Rapid Thermal Processing on MBE GaAs on Si

    Variations of electron traps in molecular-beam-epitaxial (MBE) GaAs 1ayers grown on Si substrates by rapid thermal processing (RTP) have been investigated with deep level transient spectroscopy (DLTS). RTP was...

    A. Ito, A. Kitagawa, Y. Tokuda, A. Usami, H. Kano… in MRS Online Proceedings Library (1989)

  8. No Access

    Article

    Spatial Inhomogeneities in Rapidly Thermal-Processed GaAs Wafer

    The spatial distributions of the midgap defect (EL2) concentration in semi-insulating liquid-encapsulated Czochralski GaAs wafers have been characterized by the contactless measurement of the optically injecte...

    A. Usami, A. Kitagawa, T. Wada in MRS Online Proceedings Library (1989)

  9. No Access

    Article

    Variations of Electron Traps in MBE AlxGa1−xAs by Rapid Thermal Processing

    Using deep level transient spectroscopy we have studied the variations of electron traps in molecular beam epitaxial (MBE) AlxGa1−xAs by rapid thermal processing (RTP) using halogen lamps. RTP was performed at 70...

    H. Ueda, A. Kitagawa, Y. Tokuda, A. Usami, T. Wada… in MRS Online Proceedings Library (1988)

  10. No Access

    Article

    Diffusion of Te or Zn into GaAs from Doped SiO2 Films by Rapid Thermal Processing

    The n+ layers on semi-insulating liquid encapsulated Czochralski GaAs and p+ layers on Si-doped n-type GaAs were formed by rapid thermal diffusion (RTD) from Te- and Zn-doped oxide films, respectively. The Zn dif...

    A. Kitagawa, A. Usami, Y. Tokuda, T. Wada, H. Kan… in MRS Online Proceedings Library (1988)

  11. No Access

    Article

    Optical and Electrical Characterizations of AlxGa1−xSb

    The LPE grown AlxGa1−xSb was investigated by means of TEM, a carrier profiler and PL. The TEM image showed the dissociated 60° dislocations and Lomer-Cottrell sessile dislocation formed by the reaction of two dis...

    N. Kitamura, H. Yamamoto, K. Higuchi, Y. Maeda, A. Usami… in MRS Online Proceedings Library (1987)

  12. No Access

    Article

    Diffusion of Zn into Gaas 0.6 P0.4:Te From Zn-Doped Oxide Films By Rapid Thermal Processing

    Rapid thermal processing using halogen lamps was applied to the diffusion of Zn into GaAs0.6 P0.4:Te from Zn-doped oxide films. The Zn diffusion coefficient of the rapid thermal diffused (RTD) samples at 800°C fo...

    A. Usami, Y. Tokuda, H. Shiraki, H. Ueda, T. Wada, H. Kan… in MRS Online Proceedings Library (1987)