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Article
Low-Frequency Microwave Response of a Quantum Point Contact
The low-frequency microwave photoconductance of a short (100 nm) quantum point contact based on a high-mobility two-dimensional electron gas in the frequency range of 2–3 GHz is investigated for the first time...
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Article
Photon-Stimulated Transport in a Quantum Point Contact (Brief Review)
Studies of photon-stimulated transport through a quantum point contact based on a high-mobility two-dimensional electron gas in a GaAs quantum well are reviewed. This review includes a brief historical introdu...
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Article
Photo- and Thermoelectric Phenomena in Two-Dimensional Topological Insulators and Semimetals Based on HgTe Quantum Wells (Scientific Summary)
Experimental studies of photo- and thermoelectric phenomena in two-dimensional topological insulators and semimetals based on HgTe quantum wells have been briefly reviewed.
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Article
Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well
The microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well with an inverted spectrum has been experimentally studied under irradiation at frequencies of 110–169 GHz. Two me...
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Article
Terahertz resistive response of a two-dimensional topological insulator in a quasiballistic transport regime
The terahertz resistive response of a two-dimensional topological insulator in a HgTe quantum well in the quasiballistic transport regime is studied. The photoresistance appearing only near the charge neutrali...
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Article
Fine structure of the exciton states in InAs quantum dots
The fine structure of the exciton states in InAs quantum dots grown by the Stranski-Krastanov method with short growth interruptions has been studied by microphotoluminescence at cryogenic temperatures. It has...
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Article
Energy distributions of photoelectrons emitted from p-GaN(Cs, O) with effective negative electron affinity
Energy distributions of photoelectrons emitted into vacuum from the valence band and the localized states in the energy gap of p-GaN(Cs, O) with effective negative electron affinity were studied. It is shown that...
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Article
Transformation of quantum size levels into virtual levels at the boundary between p-GaAs and an AlAs/GaAs superlattice
The transformation of quantum size levels into virtual levels upon a change in the electric field in an AlAs/GaAs superlattice located in the i region of a p-i-n structure is studied experimentally and theoretica...