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    Article

    High Throughput X-ray Diffractometer for Combinatorial Epitaxial Thin Films

    We report on the development of a high throughput x-ray diffractometer that concurrently measures spatially resolved x-ray diffraction (XRD) spectra of epitaxial thin films integrated on a substrate. A converg...

    M. Ohtani, T. Fukumura, A. Ohtomo, T. Kikuchi, K. Omote in MRS Online Proceedings Library (2011)

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    Article

    Control of the Polarity and Surface Morphology of GaN Films Deposited on C-Plane Sapphire

    Control of the polarity of GaN films deposited by metalorganic chemical vapor deposition was achieved by substrate nitridation and subsequent annealing of a buffer layer. The surface morphology and optical pro...

    M. Sumiya, T. Ohnishi, M. Tanaka, A. Ohtomo, M. Kawasaki in MRS Online Proceedings Library (2011)

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    Article

    Observation of the fractional quantum Hall effect in an oxide

    The fabrication of oxide thin-film heterostructures has improved considerably over the past few years. The first demonstration of the fractional quantum Hall effect in an oxide now attests to the potential of ...

    A. Tsukazaki, S. Akasaka, K. Nakahara, Y. Ohno, H. Ohno, D. Maryenko in Nature Materials (2010)

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    Article

    Electric-field-induced superconductivity in an insulator

    Increasing the carrier density of a material to the limit at which superconductivity can be induced has been a long-standing challenge. This is now realized in an insulator by using an electric-double-layer ga...

    K. Ueno, S. Nakamura, H. Shimotani, A. Ohtomo, N. Kimura, T. Nojima in Nature Materials (2008)

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    Epitaxial Growth and Transport Properties of High-Mobility ZnO-Based Heterostructures

    Optimization of growth conditions is most important for extracting desired material properties, but it always requires time-consuming experiments. The temperature gradient method was applied for high-throughpu...

    A. Tsukazaki, A. Ohtomo, M. Kawasaki in Frontiers in Materials Research (2008)

  6. Article

    Control of the Polarity and Surface Morphology of GaN Films Deposited on C-Plane Sapphire

    Control of the polarity of GaN films deposited by metalorganic chemical vapor deposition was achieved by substrate nitridation and subsequent annealing of a buffer layer. The surface morphology and optical pro...

    M. Sumiya, T. Ohnishi, M. Tanaka, A. Ohtomo in MRS Internet Journal of Nitride Semiconduc… (1999)

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    Article

    Oxide Quantum Structures for Future Electro-Photonics

    We show our recent development on the epitaxial growth of oxide thin films by laser molecular beam epitaxy directed towards a possible new field of electro-photonics based on metal-oxide quantum structures. Ex...

    M. Kawasaki, A. Ohtomo, R. Tsuchiya, J. Nishino in MRS Online Proceedings Library (1997)

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    Article

    Transmission Electron Microscopy Study of Room Temperature Lasing Epitaxial ZnO Films on Sapphire

    We have studied the microstructures of lasing and non-lasing ZnO films on sapphire in plan-view and cross-section by transmission electron microscopy (TEM). While ZnO films in general are made up of cloumnar c...

    N. Wang, K.K. Fung, P. Yu, Z.K. Tang, G.K.L. Wong in MRS Online Proceedings Library (1997)

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    Article

    Materials Aspects of Oxide Superconductors - Effect of Ambient Water on Superconductivity-

    It has been found that the chemical instability of Ba2LnCu3O7 causes some problems in the measurements of critical temperature and creates a highly resistive grain boundary contact which is the major cause of the...

    K. Kitazawa, K. Kishio, T. Hasegawa, A. Ohtomo in MRS Online Proceedings Library (1987)

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    Article

    Abnormal grain growth behavior of an Oxide Dispersion Strengthened Superalloy

    To obtain a superior high temperature creep strength, the transformation of fine-grained structure to large elongated grains by abnormal grain growth is an important process for oxide dispersion strengthened s...

    K. Mino, Y. G. Nakagawa, A. Ohtomo in Metallurgical Transactions A (1987)