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  1. No Access

    Article

    Defects in pulsed laser and thermal processed ion implanted silicon

    The evolution of the nature and concentration of the defects produced by 100 or 300 keV As ions at fluences 1 to 4×10−12 cm−2 inn-type, Fz Silicon doped with 1015 to 1016 cm−3 has been studied as function of ther...

    A. Blosse, J. C. Bourgoin in Applied Physics A (1984)

  2. No Access

    Article

    Comparison between Thermal and Laser Annealing in Ion-Implanted Silicon.

    N-type, 1015−1016 cm−3 doped, Fz, Silicon has been implanted with 1 to 4 × 1012 cm−2, 100 or 300 keV, As ions. The nature and concentration of the defects has been monitored using Deep Level transient Spectroscop...

    A. Blosse, J. C. Bourgoin in MRS Online Proceedings Library (1982)