9 Result(s)
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Article
Ferroelectrically tunable magnetic skyrmions in ultrathin oxide heterostructures
Magnetic skyrmions are topologically protected whirling spin texture. Their nanoscale dimensions, topologically protected stability and solitonic nature, together are promising for future spintronics applicati...
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Article
Open AccessA slanted-nanoaperture metal lens: subdiffraction-limited focusing of light in the intermediate field region
Diffraction of light limits the resolution of beam focusing with conventional lenses, as dictated by the Abbe limit, that is, approximately half the wavelength. Numerous techniques have been explored to overco...
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Article
Open AccessLoosely-bound low-loss surface plasmons in hyperbolic metamaterial
Surface plasmons (SPs) carry electromagnetic energy in the form of collective oscillation of electrons at metal surface and commonly demonstrate two important features: strong lateral confinement and short pro...
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Article
Metal–oxide–semiconductor field-effect transistor with a vacuum channel
High-speed electronic devices rely on short carrier transport times, which are usually achieved by decreasing the channel length and/or increasing the carrier velocity. Ideally, the carriers enter into a balli...
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Article
The critical amount of nitrogen on the formation of nitrogen gas pores during solidification of 25Cr-7Ni duplex stainless steels
The effects of casting thickness, nitrogen contents, cooling rate, and Mn contents on the formation of nitrogen gas pores during solidification of 25Cr-7Ni-1.5Mo-3W duplex stainless steels (DSS) were quantitat...
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Article
Structural, Electrical, and Optical Properties of Erbium-Doped Epitaxial BaTiO3 Films Grown by RF Sputtering
We have investigated the epitaxial growth of Er-doped BaTiO3 films using rf magnetron sputtering. The Er-doped films (0.5 - 1 μm thick) were deposited on MgO (001) single-crystal substrates at various temperature...
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Article
Monitoring of the Surface Species on Silicon After Chemical Cleaning by FTIR Spectroscopy
For the analysis of as-cleaned surface, we have used a the unique IR method that uses a highsurface-area porous sample. We have observed by experiments that the oxide growth rate on silicon is reduced to a min...
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Article
Erbium Doped Semiconductor Thin Films Prepared by Rf Magnetron Sputtering
Highly Er-doped (~1020 atoms/cm3) silicon and silica films were deposited by RF magnetron sputtering. Erbium was doped into the host material by co-sputtering technique. Deposited films (0.5 - 1.2 µm thick) were ...
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Article
Structural and Electrical Properties of ZnO Films Deposited on GaAs Substrates by RF Magnetron Sputtering
Sputter deposition of ZnO films on GaAs substrates has been investigated. ZnO Alms were deposited using a ZnO compound target in Ar or Ar/O2 (95/5) ambient. Deposition parameters such as RF power, substrate-targe...
