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    Bias process for heteroepitaxial diamond nucleation on Ir substrates

    Heteroepitaxy is a better method of enlarging SCD wafer size than homoepitaxy. In this work, several aspects of the bias process for heteroepitaxial diamond nucleation are studied experimentally. First, with i...

    Weihua Wang, Shilin Yang, Benjian Liu, **aobin Hao, Jiecai Han, Bing Dai… in Carbon Letters (2023)