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Article
Competing effects of Ca do** on the phase transition and related properties in (Ba1–xCax)(Ti0.95Sn0.05)O3 ceramics
We present the competing effects of isovalent Ca do** into A-site on the properties of Ca-doped Ba(Ti,Sn)O3 ceramics. (Ba1–xCax)(Ti0.95Sn0.05)O3 (BCTS) ceramics with 0 ≤ x ≤ 0.06 were fabricated to investigate ...
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Article
Significantly enhanced charge transport in polysilicon by alleviating grain boundary scattering through interface control using reduced graphene oxide
Here, we introduce interface control of polycrystalline silicon (poly-Si) using reduced graphene oxide (RGO) as a promising way to minimize the grain boundary scattering for the enhancement of the charge trans...
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Article
Charge-neutral defects control conductivity
The generation of charge-neutral anti-Frenkel defects in a complex transition metal oxide provides a useful pathway for controlling electronic conductivity while minimizing the impact on existing functions.
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Article
Thermoelectric Transport Properties of Interface-Controlled p-type Bismuth Antimony Telluride Composites by Reduced Graphene Oxide
We report the thermoelectric transport properties of interface-controlled p-type bismuth antimony telluride (BST) composites using reduced graphene oxide (rGO). The composites were prepared by the spark plasma si...
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Article
Effects of Cl-Do** on Thermoelectric Transport Properties of Cu2Se Prepared by Spark Plasma Sintering
We present the thermoelectric transport properties of Cl-doped Cu2Se1−xClx (x = 0–0.08) compounds prepared by spark plasma sintering. Cl-do** resulted in a decrease in the electrical conductivity and an increas...
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Article
Oxide Reduction Process for the Synthesis of p-Type BixSb2−xTe3 Compounds and Related Thermoelectric Transport Properties
We propose the oxide reduction process for the fabrication of p-type BixSb2−xTe3 (x = 0, 0.14, 0.24, 0.32, 0.40 and 0.54) compounds. Using starting materials in oxide forms only (Bi2O3, Sb2O3, and TeO2), we could...
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Chapter and Conference Paper
Microstructural Characterization of Proton-Irradiated 316 Stainless Steels by Transmission Electron Microscopy and Atom Probe Tomography
Proton irradiation is a well-known useful experimental technique to study neutron irradiation-induced phenomena in reactor core materials. Type 316 austenitic stainless steel was irradiated with 2 meV protons ...
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Article
Influence of stacking order and intermediate phase at low temperature on Cu2ZnSnS4 thin film formation for solar cell
A stacking order of a precursor is one of the important factors that affects the quality of Cu2ZnSnS4 (CZTS) thin film. Understanding of the intermediate phase formation and its reaction mechanism can contribute ...
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Article
Open AccessUltrafast collective oxygen-vacancy flow in Ca-doped BiFeO3
The ultrafast motion of oxygen vacancies in solids is crucial for various future applications, such as oxide electrolytes. Visualization and quantification can offer unforeseen opportunities to probe the colle...
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Article
Microstructure and mechanical behavior of low-melting point Bi-Sn-In solder joints
Ternary Bi-31.5Sn-25.0In solder has been proposed and studied for application in temperature-sensitive electronic components. In a Bi-31.5Sn- 25.0In solder joint, In was detected in an intermetallic compound (...
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Article
Effects of K-Do** on Thermoelectric Properties of Bi1−x K x CuOTe
The effects of K-do** on the thermoelectric properties of Bi1−x K x CuOTe (x = 0 to 0.08) have been investigated. The compounds were synthesized by a on...
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Article
Effect of the intermediate sulfide layer on the Cu2ZnSnS4-based solar cells
Cu2ZnSnS4 (CZTS) thin-film solar cells were fabricated using Cu/Sn/Zn and Cu/SnS/Zn precursors. The precursors were prepared using a magnetron-sputtering system with subsequent annealing (sulfurization) in a sulf...
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Article
Optimization of Synthesis Conditions of Na0.75CoO2 for High Thermoelectric Performance
Reproducibility of phase formation has been an important issue in tailoring electronic and thermal transport properties of Na x CoO2-based thermoelectric materials; however, opti...
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Article
Preparation and Thermoelectric Properties of n-Type Bi2Te2.7Se0.3:D m
Bismuth chalcogenides such as p-type (Bi,Sb)2Te3 and n-type Bi2(Te,Se)3 are excellent thermoelectric materials near room temperature. They can form homogeneous solid solutions because Bi2Te3, Sb2Te3, and Bi2Se3 h...
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Article
Parametric Study on the Tensile Properties of Ni-Based Alloy for a VHTR
A very high-temperature reactor (VHTR) has been studied among generation IV nuclear power plants owing to its many advantages such as high-electric efficiency and massive hydrogen production. The material used...
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Article
Effect of the dehydrogenation speed and Nd content on the microstructure and magnetic properties of HDDR processed Nd-Fe-B magnets
The effect of Nd content and dehydrogenation speed on the microstructure and magnetic properties of hydrogenation-disproportionation-desorption-recombination (HDDR) processed Nd-Fe-B magnetic powders was studi...
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Article
Analysis of the small punch creep test results according to the normalized lifetime fraction
The small punch creep test method was developed to complement the demerits of the existing uniaxial creep test method. A 10×10×0.5mm thin-plate specimen was used in the test, which could help save specimens an...
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Article
Synthesis and characterization of Sm(DBM)3Phen-and Nd(DBM)3Phen-doped polymethylmethacrylate for potential solar spectrum converter
Sm(DBM)3Phen and Nd(DBM)3Phen were synthesized as stable rare-earth complexes in polymer matrix. Polymethylmethacrylate (PMMA) containing these complexes was highly transparent but exhibited emission peaks in the...
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Article
Preparation and Thermoelectric Properties of Doped Bi2Te3-Bi2Se3 Solid Solutions
Since Bi2Te3 and Bi2Se3 have the same crystal structure, they form a homogeneous solid solution. Therefore, the thermal conductivity of the solid solution can be reduced by phonon scattering. The thermoelectric f...
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Article
Deposition of Cu2ZnSnS4 thin films by magnetron sputtering and subsequent sulphurization
Top-down magnetron sputtering with subsequent, separate sulphurization was used to deposit Cu2ZnSnS4 (CZTS) absorber layers for solar cells. Cu, ZnS and SnS targets were used to deposit the absorber layers onto s...