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Chapter and Conference Paper
Finite Element Monte Carlo Simulation of Recess Gate FETs
In this paper we report on a new Monte Carlo (MC) module incorporated in our Heterojunction 2D Finite element FET simulator H2F [1]. For the first time this module combines a precise description of the device ...
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Chapter and Conference Paper
Finite Element Simulation of Recess Gate MESFETs and HEMTs: The Simulator H2F
In this paper we present a new 2D finite element compound semiconductor device simulator H2F suited for simulation of the parasitic effects in recess gate MESFETs and HEMTS. Several simulation examples of real...
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Chapter and Conference Paper
Electron Beam Lithography and Dry Etching Techniques for the Fabrication of Quantum Wires in GaAs and AlGaAs Epilayer Systems
Research on transport in low dimensional semiconductor systems has recently progressed from simple layered structures to patterned devices of much greater complexity. The development of fabrication techniques ...
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Chapter and Conference Paper
Aperiodic Quantum Magnetoresistance Oscillations in Submicron n+GaAs Wires
We have investigated the aperiodic oscillatory structure in the magnetoresistance of small n+GaAs stripes of thickness 50 nm, length 10 μn and widths between 0.09 μm and 0.3 μm. The structure has been studied as ...
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Chapter and Conference Paper
Electron Beam Nanolithography
Lithography plays a central role in the fabrication of electronic devices, and is essential in the preparation of samples for studies of transport in 1-D. The minimum feature size required in the device is imp...