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    Off-axis electron holography of focused ion beam milled GaAs and Si p-n junctions

    Si and GaAs p-n junctions have been characterised in the transmission electron microscope using off-axis electron holography. Focused ion beam milling was used to prepare parallel-sided membranes with thicknes...

    D Cooper, A C Twitchett, I Farrer, D A Ritchie… in Microscopy of Semiconducting Materials (2005)