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    Elevated-Temperature STM Study of Ge and Si Growth on Si(001) From GeH4 and Si2H6

    In this study we have investigated the mechanism of Si and Ge growth from gaseous precursors, at intermediate temperatures, in elevated-temperature scanning tunnelling microscope (STM). Based on our observatio...

    J. H. G. Owen, K. Miki, D. Bowler, G. A. D. Briggs, I. Goldfarb in Surface Diffusion (1997)