Skip to main content

and
  1. No Access

    Chapter

    Post Amplifiers

    The output signal from the TIA is in the range of a few millivolts and more gain is needed to reach at least an amplitude of 200 mV required by the decision circuit. This additional gain will be introduced by ...

    Mohamed Atef, Horst Zimmermann in Optoelectronic Circuits in Nanometer CMOS Technology (2016)

  2. No Access

    Chapter

    Why Optoelectronic Circuits in Nanometer CMOS?

    Highly integrated communication systems are required to fulfill the growing demand for higher data rates in telecommunication networks. The optical fiber links are the best candidates to deal with large volume...

    Mohamed Atef, Horst Zimmermann in Optoelectronic Circuits in Nanometer CMOS Technology (2016)

  3. No Access

    Chapter

    Laser and Modulator Drivers

    The main elements of an optical transmitter are the devices used for the electrical to optical conversion (laser, VCSEL, modulator ...) and the circuit which drives the laser diode (laser driver or modulator d...

    Mohamed Atef, Horst Zimmermann in Optoelectronic Circuits in Nanometer CMOS Technology (2016)

  4. No Access

    Chapter

    Discrete Photodiodes

    Low production costs are important for large volume production. For POF communications large-area PDs are needed which will increase the chip costs if integrated in the same expensive nanometer CMOS technology.

    Mohamed Atef, Horst Zimmermann in Optoelectronic Circuits in Nanometer CMOS Technology (2016)

  5. No Access

    Chapter

    Basics of Photodiodes

    The integrated photodiode is the first stage in the monolithically integrated optical receiver. The photodiode converts the optical power into an electrical current. The photodiode should convert photons into ...

    Mohamed Atef, Horst Zimmermann in Optoelectronic Circuits in Nanometer CMOS Technology (2016)

  6. No Access

    Chapter

    Optoelectronic Circuits in Nanometer CMOS Technology

    In this chapter three fully integrated optical receivers down to 40 nm CMOS are described. In addition two optical receivers with off-chip photodiode follow. Finally optical sensors are introduced to complete ...

    Mohamed Atef, Horst Zimmermann in Optoelectronic Circuits in Nanometer CMOS Technology (2016)

  7. No Access

    Chapter

    Integrated Photodiodes in Nanometer CMOS Technologies

    This chapter contains aspects like technology selection and scaling of photodiode performance. Classical PN junction, double-junction photodiodes, finger photodiodes, PIN photodiodes, a spatially modulated lig...

    Mohamed Atef, Horst Zimmermann in Optoelectronic Circuits in Nanometer CMOS Technology (2016)

  8. No Access

    Chapter

    Equalizers

    Most of the nanometer CMOS photodetectors presented in Chap. 5 have a small bandwidth due to a slow diffusion current. The photodiodes’ bandwidth can be extended t...

    Mohamed Atef, Horst Zimmermann in Optoelectronic Circuits in Nanometer CMOS Technology (2016)

  9. No Access

    Chapter

    Optical Communications Fundamentals

    The necessary fundamentals for the analysis and design of optical communication links will be introduced in this chapter. The transmitter, receiver (transceiver) and optical fiber channel for optical communica...

    Mohamed Atef, Horst Zimmermann in Optoelectronic Circuits in Nanometer CMOS Technology (2016)

  10. No Access

    Chapter

    Transimpedance Amplifiers

    Current-to-voltage converters are necessary in optical in order to convert and amplify the weak delivered by the into a strong output voltage signal which is proportional to the input current.

    Mohamed Atef, Horst Zimmermann in Optoelectronic Circuits in Nanometer CMOS Technology (2016)