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    Chapter and Conference Paper

    The nucleation structure for cracks in AlGaN epitaxial layers

    When an epitaxial layer is under tensile strain due to lattice mismatch, cracks are expected to form above a critical thickness. In the case of Group III nitrides grown on the sapphire (0001) plane, the epitax...

    R T Murray, P J Parbrook, G Hill, I M Ross in Microscopy of Semiconducting Materials (2005)

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    Chapter

    The Stark Effect and Electron-Hole Wavefunctions in InAs-GaAs Self-Assembled Quantum Dots

    New information on the electron-hole wavefunctions in InAs-GaAs self-assembled quantum dots is obtained from study of the quantum confined Stark effect. From the sign of asymmetry observed in the Stark effect,...

    M. S. Skolnick, P. W. Fry, I. E. Itskevich… in Optical Properties of Semiconductor Nanost… (2000)

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    Chapter

    Intersubband Electroluminescence from GaAs/AIGaAs Triple Barrier and Quantum Cascade Structures

    This paper reports: (1) the first observation of intersubband electroluminescence from a single period resonant tunnelling structure; and (2) the observation of intersubband electroluminescence from GaAs/AlGaAs-b...

    Y. B. Li, J. W. Cockburn, M. S. Skolnick… in Intersubband Transitions in Quantum Wells:… (1998)

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    Chapter

    Resonant Tunnelling via the Bound States of Shallow Donors

    We have performed a systematic study of GaAs/(AlGa)As resonant tunnelling diodes in which the quantum well is intentionally δ-doped with Si donors. By comparing the I(V) of such devices with control samples we...

    J-W Sakai, P. H. Beton, M. Henini… in Semiconductor Interfaces at the Sub-Nanome… (1993)

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    Chapter

    Pressure Dependence of Negative Differential Resistance in AlGaAs/GaAs Double Barrier Resonant Tunnelling Devices up to 20 Kbar

    We have investigated the pressure dependence of Negative Differential Resistance (NDR) features observed in the DC current-voltage (I-V) characteristics of AlxGa1-xAs/GaAs Double Barrier Resonant Tunnelling Devic...

    D. G. Austing, P. C. Klipstein, A. W. Higgs… in Resonant Tunneling in Semiconductors (1991)