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    Chapter

    Structural Reconstruction of Atomically-Clean Silicon Surface during Sublimation and Epitaxy

    The elucidation of elementary processes occurring on a surface during sublimation and epitaxy is a fundamental problem for the physics of semiconductors. The determination of the nature of superstructure recon...

    A. V. Latyshev, A. L. Aseev, A. B. Krasil’nikov, S. I. Stenin in Growth of Crystals (1992)

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    Chapter and Conference Paper

    On the mechanism of {113}-defect formation in Si

    The initial stage of {113} defect formation includes self-ordering of <10>-split interstitial-vacancy (IV) pairs in the <332> directions within doubled nearest neighbour atomic chains in {113} planes accompani...

    L I Fedina, S A Song, A L Chuvilin in Microscopy of Semiconducting Materials (2005)