Skip to main content

5 Result(s)

within Chapter Remove this filter A. V. Dvurechenskii Remove this filter

and

  1. No Access

    Chapter and Conference Paper

    Ge/Si Nanostructures with Quantum Dots Grown by Ion-Beam-Assisted Heteroepitaxy

    Scanning tunneling microscopy (STM) experiments were performed to study growth modes induced by hyperthermal Ge ion action during molecular-beam epitaxy (MBE) of Ge on Si(100). Continuous and pulsed ion-beams ...

    A. V. Dvurechenskii, J. V. Smagina… in Quantum Dots: Fundamentals, Applications, … (2005)

  2. No Access

    Chapter

    Optical Properties Of Arrays Of Ge/Si Quantum Dots In Electric Field

    Zero-dimensional semiconductor structures or quantum dots (QDs) display many optical phenomena known from atomic physics. One of such exciting examples is the red-shift of the optical transition induced by an ...

    A. V. Dvurechenskii, A. I. Yakimov in Towards the First Silicon Laser (2003)

  3. No Access

    Chapter

    Characterization of Porous Silicon Layers Containing A Buried Oxide Layer

    We have developed new electrolyte solutions for high voltage electrochemical oxidation of porous silicon and have demonstrated their utility by fabricating porous silicon structures containing a buried oxide l...

    S. I. Romanov, A. V. Dvurechenskii… in Perspectives, Science and Technologies for… (2000)

  4. No Access

    Chapter

    Study of Porous Silicon Formation and Silicon-on-Porous Silicon Epitaxy (Computational Modelling)

    By computer simulation the processes of porous silicon formation and of silicon-onporous silicon epitaxy are studied. The model of electrochemical etching is applied for p+Si and p-Si substrates and takes into ac...

    P. L. Novikov, L. N. Aleksandrov, A. V. Dvurechenskii… in Nanostructured Films and Coatings (2000)

  5. No Access

    Chapter

    Homoepitaxy on Porous Silicon with a Buried Oxide Layer: Full-Wafer Scale SOI

    A new SOI technology is described which incorporates the technologies of porous silicon and molecular beam epitaxy. The principle of the method is to form a buried oxide layer by means of anodic oxidation of s...

    S. I. Romanov, A. V. Dvurechenskii… in Perspectives, Science and Technologies for… (2000)