Page
%P
-
Article
Self-aligned Thin Film Transistor Fabrication with an Ultra Low Temperature Polycrystalline Silicon Process on a Benzocyclobutene Planarized Stainless Steel Foil Substrate
Self-aligned p-channel thin film transistors (TFTs) were fabricated with an ultra low temperature polycrystalline silicon (poly-Si) process on benzocyclobutene planarized stainless steel foil substrates (SSFs)...
-
Article
Characteristics of Dopant Activation by Sequential Lateral Solidification (SLS)
The characteristics of dopant activation by sequential lateral solidification in poly-Si films is investigated using sheet resistance measurement and Raman measurement. Sheet resistance of n+ and p+ doped poly...