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    Numerical study of a novel GaN vertical FinFET with a p-base structure for high switching performance

    In this work, a novel GaN-based vertical power FinFET with an embedded p-base structure is proposed and investigated by TCAD simulations. Owing to the p-base region and heavily doped n-GaN channels, the electr...

    Chi Zhang, Bo Hou, Sheng Li, Weihao Lu… in Journal of Computational Electronics (2022)