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  1. No Access

    Article

    Al x Ga1 − x As/GaAs(100) hetermostructures with anomalously high carrier mobility

    Structural and spectroscopic methods are used to study the epitaxial layers of n-type Al x Ga1 − x As solid solutions produced by the metal-organi...

    P. V. Seredin, D. L. Goloshchapov, A. S. Lenshin, V. E. Ternovaya… in Semiconductors (2015)

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    Article

    Spinodal Decomposition of Ga x In1−x As y P1−y Quaternary Alloys

    Using X-ray structural analysis, scanning electron microscopy, atomic force microscopy, and photoluminescent spectroscopy, it is shown that it is possible to obtain a small-scale domain structure on the surfac...

    P. V. Seredin, A. V. Glotov, V. E. Ternovaya, E. P. Domashevskaya… in Semiconductors (2011)

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    Article

    Effect of silicon on relaxation of the crystal lattice in MOCVD–hydride Al x Ga1 − x As:Si/GaAs(100) heterostructures

    The X-ray diffraction and infrared spectroscopy data for MOCVD-hydride Al x Ga1 − x As:Si/GaAs(100) heterostructures and homoepitaxial GaAs:Si/GaAs(100) s...

    P. V. Seredin, A. V. Glotov, V. E. Ternovaya, E. P. Domashevskaya… in Semiconductors (2011)