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Article
Optical Study of SiO2/nanocrystalline-Si Multilayers Using Ellipsometry
Using variable-angle spectroscopic ellipsometry, we measure the pseudo-dielectric functions of as-deposited and annealed SiO2/SiOx multilayers (MLs). The SiO2(2nm)/SiOx(2nm) MLs have been prepared under various d...
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Article
Formation of Luminescent Si Nanocrystals by High-Temperature Annealing of Ion-Beam-Sputtered Si/SiO2 Multilayers
Si/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high...
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Article
Diffraction gratings of photopolymers composed of polyvinylalcohol or polyvinylacetate binder
Holographic gratings in two kinds of photopolymers (PPs) were fabricated by optical interference method. Polyvinylalcohol (PVA) and polyvinylacetate (PVAc) were employed as polymer binders and photopolymerizat...
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Article
Charging Effect in Amorphous Silicon Quantum Dots Embedded in Silicon Nitride
Capacitance-voltage was investigated for amorphous silicon quantum dots (a-Si QDs) embedded in a silicon nitride as a function of dot size and nitride thickness. a-Sci QDs were grown by plasma enhanced chemica...
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Article
Reversible and Irreversible Light-Induced Change of Photoluminescence in Porous Silicon
We have investigated the light-induced change of photoluminescence(PL) and its recovery in porous silicon. The exposure of the porous silicon to continuous laser light in vacuum results in the quenching of the...