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    Article

    Growth of GaN on Lithium Gallate Substrates for Development of a GaN Thin Compliant Substrate

    The GaN on LGO system is the near perfect template (due to extremely high etch selectivity) for develo** a viable thin film/compliant GaN substrate. Herein, we report on our efforts to grow GaN on LGO, inclu...

    W. A. Doolittle, T. Kropewnicki, C. Carter-Coman… in MRS Online Proceedings Library (1997)

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    Article

    The Use of Low Temperature AlInAs and GalnAs Lattice Matched to InP in the Fabrication of HBTs and HEMTs

    AlInAs and GaInAs lattice matched to InP and grown by MBE over a temperature range of 200 to 350°C (normal growth temperature of 500°C) has been used to enhance the device performance of inverted (where the do...

    R. A. Metzger, A. S. Brown, R. G. Wilson, T. Liu… in MRS Online Proceedings Library (1991)