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Article
Open AccessSuperior artificial synaptic properties applicable to neuromorphic computing system in HfOx-based resistive memory with high recognition rates
With the development of artificial intelligence and the importance of big data processing, research is actively underway to break away from data bottlenecks and modern Von Neumann architecture computing struct...
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Article
Characteristics of Resistive Switching of SRO/SrZrO3/Pt Stack Processed at Full Room Temperature
The resistance switching behavior of SRO/SZO/Pt devices is investigated in room temperature (RT). First, it was manufactured as a single cell to see its electrical characteristics, and it was operated by bipol...
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Article
CNT/AgNW Multilayer Electrodes on Flexible Organic Solar Cells
In this study, the fabrication of transparent CNT/AgNW multilayer electrodes on PET substrates using a spray coating process is investigated. A CNT/AgNW multilayer electrode exhibited a Rsh of 50 Ω/square with a ...
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Article
Resistance switching of heteroepitaxial Cr-doped SrZrO3 thin films
Heteroepitaxial Cr-doped SrZrO3 thin films were grown on 200 nm-thick SrRuO3 films deposited on SrTiO3 (100) substrates by pulsed laser deposition. The Cr-doped SrZrO3 films on the SrRuO3 bottom electrode exhibit...