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    Article

    Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries. Part I: GaAs, GaSb, and AlGaAs

    High-density plasma etching of GaAs, GaSb, and AlGaAs was performed inICl/Ar and IBr/Ar chemistries using an Inductively Coupled Plasma (ICP)source. GaSb and AlGaAs showed maxima in their etch rates for both p...

    Y. B. Hahn, D. C. Hays, H. Cho, K. B. Jung… in Plasma Chemistry and Plasma Processing (2000)

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    Article

    Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries. Part II: InP, InSb, InGaP, and InGaAs

    A parametric study of Inductively Coupled Plasma (ICP) etching of InP, InSb, InGaP, and InGaAs has been carried out in ICl/Ar and IBr/Ar chemistries. Etch rates in excess of 3.1 for InP, 3.6 for InSb, 2.3 for ...

    Y. B. Hahn, D. C. Hays, H. Cho, K. B. Jung… in Plasma Chemistry and Plasma Processing (2000)