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    Article

    On the New Shear Constraint for Plane-Stress Orthotropic Plasticity Modeling of Sheet Metals

    A shear constraint was very recently proposed by Abedini et al. (Int. J. Solids and Structures 151: 118–134 2018) to evaluate and calibrate advanced non-quadratic anisotropic yield criteria and to eliminate what ...

    W. Tong, M. Alharbi, J. Sheng in Experimental Mechanics (2020)

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    Article

    Numerical Study on Overcurrent Process of High-Temperature Superconducting Coated Conductors

    Overcurrent performance of high-temperature superconducting (HTS) coated conductor (CC) is one of the most crucial parameters for industrial applications, especially in superconducting fault current limiters (...

    J. Sheng, D. Hu, K. Ryu, H. S. Yang in Journal of Superconductivity and Novel Mag… (2017)

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    Article

    Electrical-Thermal-Structural Coupled Finite Element Model of High Temperature Superconductor for Resistive Type Fault Current Limiters

    A multi-physics finite element model of high-temperature superconductors (HTS) will be presented in this article. The electrical-thermal model is mainly based on Maxwell’s equation and basic heat transfer equa...

    J. Sheng, Y. Chen, B. Lin, L. Ying, Z. ** in Journal of Superconductivity and Novel Mag… (2014)

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    Research on Endurable Electrodynamic Force of YBCO Coated Conductors During Quenching Process

    In a resistive superconducting fault current limiter (SFCL), the electrodynamic force among the YBCO tapes is enormous when experiencing a high short circuit current, which may cause deformation of tapes and d...

    J. Wen, B. Lin, J. Sheng, L. Ying, L. Yao in Journal of Superconductivity and Novel Mag… (2014)

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    Article

    Experimental and Numerical Study of Co-ordination of Resistive-Type Superconductor Fault Current Limiter and Relay Protection

    Superconducting fault current limiter (SFCL) has become one of the most ideal current limiting devices to solve the problem of increasing short-circuit current in high-voltage power grid. This paper presents a...

    Y. Chen, S. Li, J. Sheng, Z. **, Z. Hong in Journal of Superconductivity and Novel Mag… (2013)

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    Article

    Study of interfacial oxide layer of LaAlO3 gate dielectrics on Si for metal–insulator–semiconductor devices

    Lanthanum aluminate (LAO) thin films were deposited on silicon by pulsed-laser deposition. It was found that oxygen partial pressure played an essential role in the formation of an interfacial layer. The films...

    H. Ling, X. Lu, A. Li, D. Wu, Q. Shao, J. Sheng, Z. Liu, N. Ming in Applied Physics A (2005)

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    Article

    Enthalpies of formation of liquid dysprosium-bismuth alloys

    J. Sheng, H. Yamana, H. Moriyama in Journal of Materials Science Letters (2001)

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    Article

    Application of a linear free energy relationship to lanthanide-zinc alloys

    J. Sheng, H. Yamana, H. Moriyama in Journal of Materials Science Letters (2001)

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    Low-temperature formation of photocatalytic Pt-anatase film by magnetron sputtering

    Films of TiO2 dispersed or coated with platinum were deposited on glass and Pt-buffered polyamide substrates respectively by magnetron sputtering. The photocatalytic activity of the films was evaluated through th...

    J. Sheng, L. Shivalingappa, J. Karasawa, T. Fukami in Journal of Materials Science (1999)

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    Oxygen dependence of Schottky barriers on niobium-doped strontium titanate single crystal

    J. SHENG, K. MASUDA, T. FUKAMI in Journal of Materials Science Letters (1997)

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    Thickness dependence of photocatalytic activity of anatase film by magnetron sputtering

    J. SHENG, J. KARASAWA, T. FUKAMI in Journal of Materials Science Letters (1997)

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    Article

    Characterization of CdTe for HgCdTe surface passivation

    The objectives of this work are to study the physical and chemical structure of CdTe films using secondary ion mass spectrometry (SIMS) and atomic force miroscopy (AFM) and to demonstrate the usefulness of the...

    L. O. Bubulac, W. E. Tennant, J. Bajaj, J. Sheng in Journal of Electronic Materials (1995)

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    Article

    The Detailed Dependence of Implanted Phosphorus Profiles in (100) Single-Crystal Si on Key Implant Parameters

    The continued decrease in semiconductor device feature size has required much smaller thermal processing budgets in order to achieve the required compact do** profiles. As a result, the impurity profiles hav...

    V. Ghante, L. M. Lam, S. Morris, S.-H. Yang, A. F. Tasch in MRS Online Proceedings Library (1995)