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    The Low Temperature Epitaxy of Strained GeSn Layers Using RTCVD System

    We have investigated the low temperature (LT) growth of GeSn–Ge–Si structures using rapid thermal chemical vapor deposition system utilizing Ge2H6 and SnCl4 as the reactive precursors. Due to inappropriate phenom...

    Yeon-Ho Kil, Sim-Hoon Yuk, Han-Soo Jang, Sang-Geul Lee… in Electronic Materials Letters (2018)