Skip to main content

2 Result(s)

within English Remove this filter Materials Science Remove this filter Electronics and Microelectronics, Instrumentation Remove this filter Di Liang Remove this filter Article Remove this filter

and

  1. No Access

    Article

    Low-Temperature, Strong SiO2-SiO2 Covalent Wafer Bonding for III–V Compound Semiconductors-to-Silicon Photonic Integrated Circuits

    We report a low-temperature process for covalent bonding of thermal SiO2 to plasma-enhanced chemical vapor deposited (PECVD) SiO2 for Si-compound semiconductor integration. A record-thin interfacial oxide layer o...

    Di Liang, Alexander W. Fang, Hyundai Park… in Journal of Electronic Materials (2008)

  2. Article

    Open Access

    High-Temperature Thermoelectric Characterization of III–V Semiconductor Thin Films by Oxide Bonding

    A device fabrication and measurement method utilizing a SiO2–SiO2 covalent bonding technique is presented for high-temperature thermoelectric characterization of thin-film III–V semiconductor materials that suffe...

    Je-Hyeong Bahk, Gehong Zeng, Joshua M. O. Zide, Hong Lu… in Journal of Electronic Materials (2010)

    Download PDF (563 KB)