13 Result(s)
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Article
D. Yu. Biryukov
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Article
Ultrasonic Testing of Butt Joints in Electric Steel Plates Using Lamb Waves
The influence of the quality of welding thin steel sheets on the physical and mechanical properties of electric steel has been studied using Lamb waves. It is shown that Lamb waves excited in the zero symmetri...
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Induced Quasi-Dynamic Disorder in a Structure of Rhenium Ion-Implanted Quartz Glass
The ultraviolet (UV) absorption spectra were studied in UV–Vis–IR quartz glasses exposed to the rhenium ion irradiation at the energy of 30 keV. An increase in ion fluence (5 × 1015–5 × 1017 cm2) is found to resu...
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Ionization effects in Si/SiO2: Li, Na, K implanted structures under the impact of high-energy α particles
The method of thermally stimulated electron emission is applied in order to investigate ionization processes and defect formation in Si/SiO2 structures under the impact of high-energy α particles. The implantatio...
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Temperature dependence of photoluminescence of semiconductor quantum dots upon indirect excitation in a SiO2 dielectric matrix
The processes of excitation and relaxation of confined excitons in semiconductor quantum dots upon indirect high-energy excitation have been considered. The temperature behavior of photoluminescence of quantum...
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Thermal ionization decay of E′ centers in germanium dioxide
The thermally induced decay of oxygen-deficient E′ centers in GeO2 glasses and ceramics has been studied experimentally and theoretically. The electron emission effect, which accompanies the thermally induced dec...
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Analytical temperature dependence of the photoluminescence of semiconductor quantum dots
The excitation and relaxation of spatially confined excitons in semiconductor quantum dots have been considered. The temperature dependence of the luminescence of quantum dots in dielectric matrices is describ...
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Formation and electron-beam annealing of implantation defects in a thin-film Si-SiO2 heterostructure
The radiation-induced defects in a 20-nm-thick SiO2 film on a silicon wafer are studied by optically stimulated electron emission. Accelerated (12-keV) silicon ions is found to generate various oxygen-deficient c...
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Photoemission and luminescence properties of quartz glass implanted with Cu+ ions
The special features of optically stimulated electron emission and luminescence of defects in KV quartz glass after Cu+ ion pulse implantation are studied. It is shown that the ion-beam modification of the photoe...
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Photoelectron spectroscopy of E′ centers in crystalline and glassy silicon dioxide
Radiation-induced E′ centers in SiO2 were studied to test the possibility of applying optically stimulated electron emission (OSEE) to the spectroscopy of excited states of point defects in dielectrics. The spect...
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Taking Account of the Nonstationarity in Analyzing the Optically Stimulated Electron Emission of Irradiated Dielectrics
The distortions of the optically stimulated electron emission (OSEE) spectra resulting from the exponential decay in the recording time have been analyzed. It has been shown that taking account of the emission...
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Article
Analysis of the Nonselective Spectra of Photostimulated Electron Emission from the Surface of Irradiated Dielectrics
The methodological aspects of PSEE spectroscopy of the surface of irradiated dielectrics have been considered. A generalized method for processing the nonselective photostimulated electron emission (PSEE) spec...
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Nonradiative relaxation of photoexcited O 1 0 centers in glassy SiO2
The processes involved in the excited-state relaxation of hole O 1 0 centers at nonbridging oxygen atoms in glassy SiO2 were studied using luminescence, optical abso...
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Influence of Point Defects in a Surface Layer on the Strength Characteristics of Glasses
The influence of the nature and the concentration of defects in a surface layer on the radiation resistance and the microhardness of silicate glasses is studied by photoemission spectroscopy. The investigation...
