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    Defects in pulsed laser and thermal processed ion implanted silicon

    The evolution of the nature and concentration of the defects produced by 100 or 300 keV As ions at fluences 1 to 4×10−12 cm−2 inn-type, Fz Silicon doped with 1015 to 1016 cm−3 has been studied as function of ther...

    A. Blosse, J. C. Bourgoin in Applied Physics A (1984)