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    Comparison between Thermal and Laser Annealing in Ion-Implanted Silicon.

    N-type, 1015−1016 cm−3 doped, Fz, Silicon has been implanted with 1 to 4 × 1012 cm−2, 100 or 300 keV, As ions. The nature and concentration of the defects has been monitored using Deep Level transient Spectroscop...

    A. Blosse, J. C. Bourgoin in MRS Online Proceedings Library (1982)