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  1. No Access

    Article

    Fabrication of epitaxial III-nitride cantilevers on silicon (1 1 1) substrates

    The molecular beam epitaxy of AlGaN/GaN epilayers on silicon (1 1 1) using an aluminum nitride buffer layer, and subsequent fabrication of free standing III-nitride cantilevers on Si(1 1 1) has been investigat...

    S. Davies, T. S. Huang, R. T. Murray… in Journal of Materials Science: Materials in… (2004)

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    Article

    High density net shape components by direct laser re-melting of single-phase powders

    Direct Metal Laser Re-Melting is a variant of the Selective Laser Sintering process, a Rapid Prototy** (RP) technology. This tool-less manufacturing technology has the potential of producing complex, high qu...

    R. H. Morgan, A. J. Papworth, C. Sutcliffe, P. Fox… in Journal of Materials Science (2002)