![Loading...](https://link.springer.com/static/c4a417b97a76cc2980e3c25e2271af3129e08bbe/images/pdf-preview/spacer.gif)
-
Article
Pre-wetting process with helium atmospheric pressure glow discharge for three-dimensional porous scaffold
Recently, three-dimensional polymer scaffolds were developed for tissue regeneration. Conventional pre-wetting processes require a lengthy processing time and have residue problems. In this study, a helium atm...
-
Article
Enhanced cellular responses of vascular endothelial cells on poly-γ-glutamic acid/PU composite film treated with microwave-induced plasma at atmospheric pressure
Poly-γ-glutamic acid (γ-PGA), which is produced by microbial fermentation, is a biodegradable, hydrophilic and non-toxic biomaterial. γ-PGA has many carboxyl groups that makes it a polyanionic biopolymer with swe...
-
Article
Cellular responses and behaviors of adipose-derived stem cells onto β-glucan and PLGA composites surface-modified by microwave-induced argon plasma
-
Article
The critical amount of nitrogen on the formation of nitrogen gas pores during solidification of 25Cr-7Ni duplex stainless steels
The effects of casting thickness, nitrogen contents, cooling rate, and Mn contents on the formation of nitrogen gas pores during solidification of 25Cr-7Ni-1.5Mo-3W duplex stainless steels (DSS) were quantitat...
-
Article
Structural, Electrical, and Optical Properties of Erbium-Doped Epitaxial BaTiO3 Films Grown by RF Sputtering
We have investigated the epitaxial growth of Er-doped BaTiO3 films using rf magnetron sputtering. The Er-doped films (0.5 - 1 μm thick) were deposited on MgO (001) single-crystal substrates at various temperature...
-
Article
Monitoring of the Surface Species on Silicon After Chemical Cleaning by FTIR Spectroscopy
For the analysis of as-cleaned surface, we have used a the unique IR method that uses a highsurface-area porous sample. We have observed by experiments that the oxide growth rate on silicon is reduced to a min...
-
Article
Erbium Doped Semiconductor Thin Films Prepared by Rf Magnetron Sputtering
Highly Er-doped (~1020 atoms/cm3) silicon and silica films were deposited by RF magnetron sputtering. Erbium was doped into the host material by co-sputtering technique. Deposited films (0.5 - 1.2 µm thick) were ...
-
Article
Structural and Electrical Properties of ZnO Films Deposited on GaAs Substrates by RF Magnetron Sputtering
Sputter deposition of ZnO films on GaAs substrates has been investigated. ZnO Alms were deposited using a ZnO compound target in Ar or Ar/O2 (95/5) ambient. Deposition parameters such as RF power, substrate-targe...