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Article
Improved Mobility and Transmittance of Room-Temperature-Deposited Amorphous Indium Gallium Zinc Oxide (a-IGZO) Films with Low-Temperature Postfabrication Anneals
Thin films of amorphous indium gallium zinc oxide with high transmittance were deposited at room temperature onto flexible polymer substrates. Postdeposition anneals were performed at low temperatures in diffe...
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Article
Mechanical and Electro-Mechanical Stress Effects on Performance of Flexible IZO TFTs
This study reports the influence of electrical and mechanical stresses on indium zinc oxide (IZO) thin film transistors (TFTs).The deformation is introduced by mounting the samples on cylindrical structures of...
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Article
ZnO-based transparent anodes for organic light-emitting devices
ZnO/Au/ZnO (ZAZ) electrodes grown on flexible PEN substrates were evaluated as transparent electrodes for organic light-emitting devices (OLEDs). OLEDs fabricated with the ZAZ electrodes showed reduced leakage...
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Article
Gold Nanolayers Embedded in Zinc Oxide for Large Area Flexible Photovoltaics
Transparent conducting ZnO/Au/ZnO thin film structures were grown by the magnetron sputtering technique on flexible polymer substrates. These films displayed a seven orders of magnitude drop in resistivity (20...
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Article
Microwave Activation of Exfoliation in Ion–Cut Silicon Layer Transfer
Microwave heating is used to initiate the ion-cut process for transfer of coherent silicon-layers onto insulator substrates. Hydrogen and boron co-implanted silicon was bonded to an insulative substrate before...
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Article
The role of sputter pressure in influencing electrical and optical properties of ITO on glass
Thin layers of indium tin oxide (ITO) were deposited onto glass substrates by RF magnetron sputtering with the pressure varying from 6 mTorr to 15 mTorr. The films were annealed in a reducing atmosphere at 500...
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Article
A Study of Tungsten-Titanium Barriers in Silver Metallization
This work investigated the viability of tungsten-titanium barrier layers for silver metallization. Reactive sputtered W-Ti was deposited on a Si wafer followed by an Ag thin film over layer. These samples were...
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Article
Mechanical Properties of Indium Tin Oxide on Polyethylene Napthalate Substrate
This work investigates the mechanical properties of ITO on PEN substrates as a function of processing conditions, including rf power, substrate temperature, and substrate treatment. The best mechanical perform...
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Article
Microwave Activation of Dopants & Solid Phase Epitaxy in Silicon
Microwave heating is used to activate solid phase epitaxial re-growth of amorphous silicon layers on single crystal silicon substrates. Layers of single crystal silicon were made amorphous through ion implanta...
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Article
Microwave annealing for preparation of crystalline hydroxyapatite thin films
A sol was spun on single crystal silicon substrates at a spin-rate of 3000–5000 rpm followed by a low temperature cure to form a stable sol–gel/silicon structure. Good quality crystalline HA films of thickness...
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Article
Crystallization kinetics of sol-gel derived hydroxyapatite thin films
The crystallization kinetics of sol-gel derived hydroxyapatite (HA) and tricalcium phosphate (TCP) thin films were studied to determine whether viscous sintering could be used for densification. The films were...
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Article
The Integration of Low-k Dielectric Material Hydrogen Silsesquioxane (HSQ) with Nitride Thin Films as Barriers
HSQ (hydrogen silsesquioxane) is one of the promising low-k materials used in VLSI technology as an intra-metal dielectric to reduce capacitance-related issues. Like any other dielectrics, the integration of H...
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Article
Kinetics Model for the Self-Encapsulation of Ag/Al Bilayers
A model is proposed to describe the temperature dependence of the aluminum oxynitride (AlxOyNz) diffusion barrier formation during a silver self-encapsulation process. These barrier layers form in the temperature...
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Article
Formation of AlxOyNz Barriers for Advanced Silver Metallization
Silver has been explored as a potential candidate for future advanced interconnects due to its lowest electrical resistivity, when compared with Al and Cu. As in the case of Cu metallization, an additional lay...
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Article
A Comparative Study of Ti/Low-k HSQ (Hydrogen Silsesquioxane) and Ti/TEOS (Tetraethylorthosilicate) Structures at Elevated Temperatures
For the benefit of reducing capacitance in multilevel interconnect technology, low-k dielectric HSQ (hydrogen silsesquioxane) has been used as a gapfill material in Al-metallization- based non-etchback embedde...
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Article
TEM Observations of AG-TI Bilayers After Thermal Aging Treatment in a Reducing Ambient
Transmission electron microscopy (TEM) in both cross sectional and plan view is used to study the effect of annealing Ag-Ti bilayers deposited on SiO2/Si substrates in an NH3 ambient. The resulting structure, tex...
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Article
Physical Characterization of Photosensitive Polyimide
Polyimides prepared from oxydiphthalic anhydride and diamine precursors can be photosensitive. The thermal, mechanical, and dielectric properties of the polyimide films have been characterized with various tec...
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Article
Influence of Underlayer and Encapsulation Process on Texture in Polycrystalline Silver Thin Films
The texture in polycrystalline Ag thin films prepared by e-beam evaporation has been characterized by an x-ray diffraction technique as a function of underlayers and encapsulation temperatures. The Ag films de...
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Article
Analysis of Residual Stress in Polycrystalline Silver Thin Films by X-Ray Diffraction
The stress state of evaporated Ag films prepared on Ti underlayers before and after encapsulation process has been studied by x-ray diffraction using a “sin2Ψ” technique. A low tensile stress of approximately 61 ...
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Article
The Formation of TiN-Encapsulated Silver Films by Nitridation of Silver-Refractory Metal Alloys in NH3
Encapsulated Ag(Ti) films on oxidized silicon were obtained by nitridation of Ag(19 at.% Ti) alloys in NH3 at temperatures between 400–700°C for various times. Upon annealing Ti segregates to the surface and allo...
