-
Article
Open AccessGraphene/Si-nanowire heterostructure molecular sensors
Wafer-scale graphene/Si-nanowire (Si-NW) array heterostructures for molecular sensing have been fabricated by vertically contacting single-layer graphene with high-density Si NWs. Graphene is grown in large sc...
-
Article
In-situ monitoring of AuCl3-do** and -dedo** behaviors in graphene
In-situ variations of the surface morphology, transmittance, sheet resistance, and Dirac curve of graphene have been monitored during AuCl3-do** and annealing-induced-dedo** processes. The transmittance of gr...
-
Article
High photoresponsivity in an all-graphene p–n vertical junction photodetector
Intensive studies have recently been performed on graphene-based photodetectors, but most of them are based on field effect transistor structures containing mechanically exfoliated graphene, not suitable for p...
-
Article
Optical study of bulk and thin-film tin dioxide
We grew nano-crystalline SnO2 thin films on Si substrates by using RF magnetron sputtering deposition method. We examined the microstructure of the SnO2 thin films via X-ray diffraction (XRD) and the optical prop...
-
Article
Effect of Ga do** concentration on the luminescence efficiency of GaN light-emitting diodes with Ga-doped ZnO contacts
P–n junction GaN light-emitting diodes (LEDs) were fabricated using Ga-doped ZnO (GZO) films as electrical contacts and characterized by electroluminescence (EL) and current–voltage (I–V) measurements. GaN p–n...
-
Article
Effect of Al concentration on the structural, electrical, and optical properties of transparent Al-doped ZnO
Al-doped ZnO (AZO) films have been deposited on sapphire substrates at 400 °C for various Al do** concentrations (nAl) from 0 to 5 wt.% by RF magnetron sputtering and were subsequently annealed at 600 ∼ 800 °C ...
-
Article
Graphene synthesis from graphite/Ni composite films grown by sputtering
Graphite/Ni composite films have been deposited on SiO2/Si (100) wafers by varying their graphite concentration (n G ) and thickness (t) from 2 to 12 wt% and 40 ...
-
Article
Photovoltaic and luminescence properties of Sb- and P-doped Si quantum dots
Sb-doped SiO1.2/SiO2 and InP-doped Si/SiO2 multilayers were prepared on p-type Si (100) wafers by ion beam sputtering and were subsequently annealed to form n-type Si quantum dots (QDs)/ptype crystalline Si heter...
-
Article
Effect of oxygen content on resistive switching memory characteristics of TiO x films
This work reports a strong oxygen-content dependence of the resistive switching characteristics in TiO x films grown by sputtering Ti under an oxygen ambient at flow rates (F ...
-
Article
Optical Study of SiO2/nanocrystalline-Si Multilayers Using Ellipsometry
Using variable-angle spectroscopic ellipsometry, we measure the pseudo-dielectric functions of as-deposited and annealed SiO2/SiOx multilayers (MLs). The SiO2(2nm)/SiOx(2nm) MLs have been prepared under various d...
-
Article
Formation of Luminescent Si Nanocrystals by High-Temperature Annealing of Ion-Beam-Sputtered Si/SiO2 Multilayers
Si/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high...
-
Article
Diffraction gratings of photopolymers composed of polyvinylalcohol or polyvinylacetate binder
Holographic gratings in two kinds of photopolymers (PPs) were fabricated by optical interference method. Polyvinylalcohol (PVA) and polyvinylacetate (PVAc) were employed as polymer binders and photopolymerizat...
-
Article
Charging Effect in Amorphous Silicon Quantum Dots Embedded in Silicon Nitride
Capacitance-voltage was investigated for amorphous silicon quantum dots (a-Si QDs) embedded in a silicon nitride as a function of dot size and nitride thickness. a-Sci QDs were grown by plasma enhanced chemica...
-
Article
Reversible and Irreversible Light-Induced Change of Photoluminescence in Porous Silicon
We have investigated the light-induced change of photoluminescence(PL) and its recovery in porous silicon. The exposure of the porous silicon to continuous laser light in vacuum results in the quenching of the...
