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Article
Electrical Defect Analysis Following Pulsed Laser Irradiation of Unimplanted GaAs
Current-voltage, capacitance-voltage and defect spectroscopy techniques are used to characterize the electrical properties of GaAs crystals after pulsed laser irradiation with either a Nd-YAG or a Ruby laser. ...
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Article
Steady State and Transient Capacitance Measurements of the Energy Levels of a Low Angle Tilt Boundary in a Germanium Bicrystal
Steady state and transient capacitance (DLTS) measurements have been performed on a low angle tilt boundary in a germanium bicrystal, in combination with an electron microscope study of the boundary dislocatio...
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Chapter
Minority Carrier Traps in Electron Irradiated n-Type Germanium
Minority carrier traps created by electron irradiation at room temperature in slightly doped n-type germanium have been studied using transient capacitance spectroscopy. Levels at 0.16 (H1), 0.30 (H2), 0.37 (H3) ...
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Article
Defect annealing in phosphorus implanted silicon: A D.L.T.S. study
Deep-level transient spectroscopy (D.L.T.S.) has been applied to the determination of defects in ion implanted silicon. Preliminary results concerning defects introduced by 130 KeV phosphorous ion implantation...
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Chapter
Techniques for Studying Ion Implantation In Diamond
Measurements using electron paramagnetic resonance, optical absorption, Raman scattering and luminescence have been performed in ion implanted type IIa diamonds. Results are described which show how these tech...
