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Article
An entangled-light-emitting diode
For optical quantum computation and related information technologies to fulfil their promise, they will require a source of entangled photons that can be delivered efficiently on demand. Existing entangled-lig...
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Chapter
Quantum dots for single photon and photon pair technology
The excitation of a quantum dot from its ground state depends on the probabilistic nature of carrier capture, and thus radiative decay can occur via a multi photon cascade. It is also possible that non-radiati...
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Chapter and Conference Paper
Off-axis electron holography of focused ion beam milled GaAs and Si p-n junctions
Si and GaAs p-n junctions have been characterised in the transmission electron microscope using off-axis electron holography. Focused ion beam milling was used to prepare parallel-sided membranes with thicknes...
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Article
Growth Temperature Dependence of Size Distribution of Self-Assembled Inas Quantum Dots on Gaas(001): From Diffusion-To Strain-Limited Growth
We have investigated the molecular beam epitaxy (MBE) growth of buried InAs quantum dots on GaAs (001) surface, as a function of deposition temperature, by transmission electron microscopy (TEM) and photolumin...