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    Microwave response of a ballistic quantum dot

    The microwave response (photovoltage and photoconductance) of a lateral ballistic quantum dot made of a high-mobility two-dimensional electron gas in an AlGaAs/GaAs heterojunction has been studied experimental...

    Z. D. Kvon, G. M. Gusev, A. D. Levin, D. A. Kozlov, E. E. Rodyakina in JETP Letters (2014)

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    Surface-enhanced Raman scattering by semiconductor nanostructures

    Surface-enhanced Raman scattering by optical and surface phonons in CdS, GaN, and CuS nanocrystals, and AlN nanowires is detected and studied. It is found that the presence of metal (Ag, Au, and Pt) nanocluste...

    A. G. Milekhin, L. L. Sveshnikova in Optoelectronics, Instrumentation and Data … (2013)

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    Drift of adatoms on the (111) silicon surface under electromigration conditions

    The existence of the drift of adatoms on the surface that is induced by an electric current heating a sample under the conditions of sublimation, homoepitaxial growth, and quasiequilibrium on the (111) silicon...

    E. E. Rodyakina, S. S. Kosolobov, A. V. Latyshev in JETP Letters (2011)

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    Carbon-stimulated self-organization of Ge nanoislands during molecular beam epitaxy of Ge/CaF2/Si(111) heterostructures

    The self-organization of germanium nanoislands on the surface of calcium fluoride was studied using atomic-force microscopy and reflection electron diffraction. A Ge/CaF2/Si(111) structure was grown by molecular ...

    L. V. Sokolov, A. S. Deryabin in Optoelectronics, Instrumentation and Data … (2009)

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    Initial stages of gold adsorption on silicon stepped surface at elevated temperatures

    Experimental study performed by ultrahigh vacuum reflection electron microscopy and atomic force microscopy reveals step instability on Si(111) surface during gold deposition at elevated temperatures (higher t...

    S. S. Kosolobov, Se Ahn Song, E. E. Rodyakina, A. V. Latyshev in Semiconductors (2007)

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