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  1. No Access

    Article

    Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface

    A method for creation of Ge/Si structures with space-arranged nanoislands by heteroepitaxy on the pre-patterned Si(001) substrates with a square grid of the etched pits is developed. The influence of depth and...

    Zh. V. Smagina, V. A. Zinovyev, G. K. Krivyakin, E. E. Rodyakina… in Semiconductors (2018)

  2. No Access

    Article

    Localization of Surface Plasmon Waves in Hybrid Photodetectors with Subwavelength Metallic Arrays

    The spectral characteristics of the hole photocurrent in plasmon photodetectors based on Ge/Si heterostructures with Ge quantum dots combined with regular arrays of subwavelength apertures of various shapes in...

    A. I. Yakimov, V. V. Kirienko, A. V. Dvurechenskii in JETP Letters (2018)

  3. No Access

    Article

    Analytical Expression for the Distribution of Elastic Strain Created by a Polyhedral Inclusion with Arbitrary Eigenstrain

    Analytical expressions for the displacement vector, stain tensor, and Eshelby tensor have been obtained in the case where an inclusion in an elastically isotropic infinite medium has a polyhedral shape. The ei...

    A. V. Nenashev, A. V. Dvurechenskii in Physics of the Solid State (2018)

  4. No Access

    Article

    Quantum Gates with Spin States in Continuous Microwave Field

    The physical basis of the method of implementing quantum logical operations in a continuous microwave field in a system of two electrons with different g-factors and a constant exchange interaction is develope...

    A. F. Zinovieva, A. V. Nenashev, A. A. Koshkarev… in Russian Microelectronics (2018)

  5. No Access

    Article

    Energy Spectrum of Charge Carriers in Elastically Strained Assemblies of Ge/Si Quantum Dots

    The results of studying the energy spectrum of electrons and holes localized in second-type Ge/Si heterostructures with Ge quantum dots are presented. In such structures, holes are localized at Ge quantum dots...

    A. A. Bloshkin, A. I. Yakimov… in Journal of Surface Investigation: X-ray, S… (2018)

  6. No Access

    Article

    Hall effect in hop** conduction in an ensemble of quantum dots

    The Hall effect in heterostructures with a two-dimensional array of tunneling-coupled Ge quantum dots grown by molecular-beam epitaxy on Si is investigated. The conductivity of these structures in zero magneti...

    N. P. Stepina, A. V. Nenashev, A. V. Dvurechenskii in JETP Letters (2017)

  7. No Access

    Article

    Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots

    It is found that the integration of Ge/Si heterostructures containing layers of Ge quantum dots with twodimensional regular lattices of subwave holes in a gold film on the surface of a semiconductor leads to t...

    A. I. Yakimov, V. V. Kirienko, V. A. Armbrister, A. V. Dvurechenskii in JETP Letters (2017)

  8. No Access

    Article

    Photoluminescence enhancement in double Ge/Si quantum dot structures

    The luminescence properties of double Ge/Si quantum dot structures are studied at liquid helium temperature depending on the Si spacer thickness d in QD molecules. A seven-fold increase in the integrated photolum...

    A. F. Zinovieva, V. A. Zinovyev, A. I. Nikiforov, V. A. Timofeev… in JETP Letters (2016)

  9. No Access

    Article

    Enhancement of the hole photocurrent in layers of Ge/Si quantum dots with abrupt heterointerfaces

    The photoconductive gain, hole photocurrent spectra in the mid-infrared range, and band-to-band photoluminescence spectra in arrays of Ge/Si quantum dots with different elemental compositions of the heterointe...

    A. I. Yakimov, V. V. Kirienko, V. A. Armbrister, A. V. Dvurechenskii in JETP Letters (2016)

  10. No Access

    Article

    Raman studies of phase and atomic compositions of GeSi nanosystems after pulsed annealing

    The phase and elemental compositions of GeSi heterostructures deposited on non-refractory substrates are analyzed by using a non-destructive express technique, i.e., the Raman spectroscopy. It is shown that ap...

    A. V. Dvurechenskii, V. A. Volodin… in Optoelectronics, Instrumentation and Data … (2016)

  11. No Access

    Article

    Suppression of hole relaxation in small Ge/Si quantum dots

    We study the effect of quantum dot size on the mid-infrared photocurrent, photoconductive gain, and hole capture probability in ten-period p-type Ge/Si quantum dot heterostructures. The dot dimensions are varied ...

    A. I. Yakimov, V. V. Kirienko, A. A. Bloshkin, V. A. Armbrister… in JETP Letters (2015)

  12. No Access

    Article

    Temperature-stimulated transition from a macroscopic to a mesoscopic behavior of the hop** conductivity in a quantum-dot ensemble

    A temperature-induced transition to the macroscopic behavior of the hop** conductivity is observed in Ge/Si quantum-dot heterostructures upon the investigation of light-induced mesoscopic fluctuations of the...

    N. P. Stepina, I. A. Verkhushin, A. V. Nenashev, A. V. Dvurechenskii in JETP Letters (2015)

  13. No Access

    Article

    Unusual narrowing of the ESR line width in ordered structures with linear chains of Ge/Si quantum dots

    Electron states in ordered Ge/Si heterostructures with linear chains of quantum dots (QDs) were studied by the electron spin resonance (ESR) method. A new ESR signal with principal g-factor values g ...

    A. F. Zinovieva, Zh. V. Smagina, A. V. Nenashev, L. V. Kulik… in JETP Letters (2015)

  14. No Access

    Article

    Linear chains of Ge/Si quantum dots grown on a prepatterned surface formed by ion irradiation

    The growth of Ge nanoclusters on a prepatterned Si (100) surface formed by imprint lithography in combination with subsequent irradiation with Ge+ ions is studied. The prepatterned surface presents a system of pa...

    Zh. V. Smagina, A. V. Dvurechenskii, V. A. Seleznev, P. A. Kuchinskaya… in Semiconductors (2015)

  15. No Access

    Article

    Strain-induced localization of electrons in layers of the second-type Ge/Si quantum dots

    Electronic states in multilayer Ge/Si heterostructures with different periods of the arrangement of layers of Ge quantum dots have been studied by the photocurrent spectroscopy method. It has been found that t...

    A. I. Yakimov, V. V. Kirienko, A. A. Bloshkin, V. A. Armbrister… in JETP Letters (2015)

  16. No Access

    Article

    Simulating the nucleation and growth of Ge quantum dots on Si using high-efficiency algorithms

    Original approaches are presented for elucidating a microscopic mechanism of surface atomic diffusion and simulating the heteroepitaxial nanostructure growth on substrates with a complex relief. Using the mole...

    P. L. Novikov, A. V. Nenashev, S. A. Rudin, A. S. Polyakov… in Nanotechnologies in Russia (2015)

  17. No Access

    Article

    Nucleation and growth of ordered groups of SiGe quantum dots

    An approach for the formation of ordered groups of Ge nanoislands (quantum dots, QDs) upon epitaxial growth on the surface of a heterostructure constituted by a Si (100) substrate having preliminarily formed s...

    V. A. Zinovyev, A. V. Dvurechenskii, P. A. Kuchinskaya, V. A. Armbrister… in Semiconductors (2015)

  18. No Access

    Article

    Conductance through chains of Ge/Si quantum dots: Crossover from one-dimensional to quasi-one-dimensional hop**

    Parallel chains of germanium quantum dots were grown on a patterned silicon (100) substrate prepared by the combination of nanoimprint lithography and ion irradiation. Strong anisotropy of the conductance betw...

    N. P. Stepina, V. V. Valkovskii, Y. M. Galperin, Zh. V. Smagina… in JETP Letters (2015)

  19. No Access

    Article

    Bidirectional photocurrent of holes in layers of Ge/Si quantum dots

    Spectra of the photocurrent of holes in δ-doped Si layers with Ge quantum dots in weak external electric fields have been studied. It has been established that the photocurrent of the holes in the photovoltaic...

    A. I. Yakimov, V. V. Kirienko, V. A. Timofeev, A. V. Dvurechenskii in JETP Letters (2014)

  20. No Access

    Article

    On the process of hole trap** in Ge/Si heterostructures with Ge quantum dots

    Admittance spectroscopy is used to determine the cross sections and energy levels of holes in Ge/Si heterostructures with Ge quantum dots. The structures are grown by molecular-beam epitaxy. It is established ...

    A. A. Bloshkin, A. I. Yakimov, V. A. Timofeev, A. V. Dvurechenskii in Semiconductors (2014)

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