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    Article

    A genetic algorithm particle pairing technique for 3D velocity field extraction in holographic particle image velocimetry

     This research explores a novel technique, using Genetic Algorithm Particle Pairing (GAPP) to extract three-dimensional (3D) velocity fields of complex flows. It is motivated by Holographic Particle Image Velo...

    J. Sheng, H. Meng in Experiments in Fluids (1998)

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    Article

    An improved scheme for time-dependent boundary conditions in atmospheric general circulation models

     Atmospheric general circulation models (AGCMs) are often “coupled” with time varying observations of boundary conditions or some other aspect of the climate system. A typical example is the Atmospheric Model ...

    J. Sheng, F. Zwiers in Climate Dynamics (1998)

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    Article

    Oxygen dependence of Schottky barriers on niobium-doped strontium titanate single crystal

    J. SHENG, K. MASUDA, T. FUKAMI in Journal of Materials Science Letters (1997)

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    Article

    Thickness dependence of photocatalytic activity of anatase film by magnetron sputtering

    J. SHENG, J. KARASAWA, T. FUKAMI in Journal of Materials Science Letters (1997)

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    Article

    Uniaxial tensile response of microfibre reinforced cement composites

    Microfibre reinforced cement composites reinforced with high volume fractions of carbon, steel and polypropylene fibres were tested in uniaxial tension. Composites investigated included those with only one typ...

    N. Banthia, A. Moncef, K. Chokri, J. Sheng in Materials and Structures (1995)

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    Article

    Characterization of CdTe for HgCdTe surface passivation

    The objectives of this work are to study the physical and chemical structure of CdTe films using secondary ion mass spectrometry (SIMS) and atomic force miroscopy (AFM) and to demonstrate the usefulness of the...

    L. O. Bubulac, W. E. Tennant, J. Bajaj, J. Sheng in Journal of Electronic Materials (1995)

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    Article

    The Detailed Dependence of Implanted Phosphorus Profiles in (100) Single-Crystal Si on Key Implant Parameters

    The continued decrease in semiconductor device feature size has required much smaller thermal processing budgets in order to achieve the required compact do** profiles. As a result, the impurity profiles hav...

    V. Ghante, L. M. Lam, S. Morris, S.-H. Yang, A. F. Tasch in MRS Online Proceedings Library (1995)

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    Article

    A numerical simulation of gas flow during coal/gas outbursts

    A model of the gas flow in airways during an instantaneous outburst of coal and gas is formulated and solved numerically using MacCormack's explicit finite-difference scheme. This model is based on the assumpt...

    F. Otuonye, J. Sheng in Geotechnical & Geological Engineering (1994)

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