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DC and RF Performance Analysis of Extended Field Plated AlGaN/GaN/ β-Ga2O3 HEMT

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Abstract

In this work, High Electron Mobility Transistor is grown on various Substrates such as silicon (Si), silicon carbide (SiC), and sapphire substrate to exhibit a negative threshold voltage, whereas grown on β-gallium oxide (β-Ga2O3) to exhibit a positive threshold voltage. The optimization is done by using the pi-shaped gate and filed plate towards the drain and triple tooth metal for the proposed structure. In this, work Al0.8Ga0.2 N /AlN /GaN /AlN /Al0.4Ga0.6 N /GaN /AlN / Al0.8Ga0.2 N / β-Ga2O3 HEMT is proposed to improve the breakdown voltage, subthreshold swing. Β-Ga2O3 is prominent material to reduce the leakage current in the structure. It is observed from the obtained results that the Breakdown voltage for Si is 15 V, SiC is 20 V, Sapphire is 114 V, β-Ga2O3 is 125 V,d Unilateral power gain of 21.12dB, 19.56dB, 18.9dB, 9.5dB, at 851 GHz, 774 GHz, 738 GHz, 318 GHz when the proposed structure is grown on β-Ga2O3, SiC, Sapphire, Si substrates. In the proposed HEMT there is a compromise between frequency and breakdown voltage. If one factor improves the other reduces. But by using β-Ga2O3 as a substrate the achievement of both factors is possible. This is possible because of properly layering hetero-materials with matched lattice constant. β-Ga2O3 is a material that is a trend in the market and which resulted in intensive research. In the proposed structure Ferroelectric material i.e. lead Zirconate titanate oxide (PbZrTiO3) is used as a gate to reduce the power consumption and to increase the storage capacity in a unit area. Ferroelectric materials possess elevated dielectric constant and it has the capability of storing more charge per unit area when compared to other materials. In the small area, this material can store more data with low power consumption.

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Acknowledgements

The authors wish to thank the Department of Science & Technology, Government of India, for funding the Research Infrastructure under the Scheme entitled “Funds for the Improvement of S&T Infrastructure (DST-FIST)” Ref. No. SR/FST/College − 110/2017.

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Authors and Affiliations

  1. Department of Electrical and Electronics Engineering, Easwari Engineering College, Ramapuram, Chennai, 600089, Tamil Nadu, India

    R. Karpagam

  2. Department of Electronics and Communication Engineering, Panimalar Engineering College, Chennai, 600123, Tamil Nadu, India

    S. Leones Sherwin Vimalraj

  3. Department of Mechanical Engineering, Loyola-ICAM College of Engineering and Technology, Loyola Campus, Chennai, 600034, Tamil Nadu, India

    G. K. Sathishkumar

  4. SRM Institute of Science and Technology, Ramapuram Campus, Chennai, 600089, Tamil Nadu, India

    V. Megala

  5. Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Green Fields, Vaddeswaram, 522502, Andhra Pradesh, India

    Y. Gowthami & B. Balaji

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Correspondence to B. Balaji.

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Karpagam, R., Vimalraj, S.L.S., Sathishkumar, G.K. et al. DC and RF Performance Analysis of Extended Field Plated AlGaN/GaN/ β-Ga2O3 HEMT. Trans. Electr. Electron. Mater. 24, 459–468 (2023). https://doi.org/10.1007/s42341-023-00464-6

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