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Continuous and highly ordered organic semiconductor thin films via dip-coating: the critical role of meniscus angle

浸渍提拉法制备连续、高度有序有机半导体薄膜: 弯月面角的关键作用

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Abstract

Dip-coating is a low-cost, high-throughput technique for the deposition of organic semiconductors over large area on various substrates. Tremendous studies have been done and many parameters such as withdrawal speed, solvent type and solution concentration have been investigated. However, most of the depositions were ribbons or dendritic crystals with low coverage of the substrate due to the ignorance of the critical role of dynamic solution-substrate interactions during dip-coating. In this study, meniscus angle (MA) was proposed to quantify the real-time in-situ solution-substrate interactions during dip-coating. By proper surface treatment of the substrate, the value of MA can be tuned and centimeter-sized, continuous and highly ordered organic semiconductor thin films were achieved. The charge transport properties of the continuous thin films were investigated by the construction of organic field-effect transistors. Maximum (average) hole mobility up to 11.9(5.1) cm2 V−1s−1 was obtained. The average mobility was 82% higher than that of ribbon crystals, indicating the high crystallinity of the thin films. Our work reveals the critical role of dynamic solution-substrate interactions during dip-coating. The ability to produce large-area, continuous and highly ordered organic semiconductor thin films by dip-coating could revival the old technique for the application in various optoelectronics.

摘要

浸渍提拉法是一种低成本、大面积、高效制备有机半导体 薄膜的技术. 针对该技术中提拉速度、溶剂类型、溶液浓度等参 数的研究报道已很多. 但由于忽略了提拉过程中溶液-衬底相互作 用这个关键因素, 提拉得到的沉积物绝大多数为带状或树枝状晶 体, 覆盖率较低. 本文提出用弯月面角(MA)来量化浸渍提拉过程 中溶液与衬底的实时相互作用的**弱. 通过对衬底进行适当的表 面处理, 可以调节MA值, 从而可以获得厘米级、连续、高度有序 的有机半导体薄膜, 并构建了有机场效应晶体管(OFETs), 研究了 连续薄膜的电荷输运特性. 最大(**均) 空穴迁移率可达 11.9(5.1) cm2 V−1 s−1. 统计显示连续薄膜的**均迁移率比带状晶体 高82%, 表明所制备的薄膜具有高结晶度. 该工作揭示了浸渍提拉 过程中动态溶液-衬底相互作用在薄膜沉积过程中扮演的关键角 色, 给出了衡量二者之间相互作用**弱的量化指标, 为浸渍提拉法 制备大面积、连续、高度有序的有机半导体薄膜的研究及其在各 种光电器件领域的应用提供了理论和技术支撑.

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Acknowledgements

The authors acknowledge financial support from the National Natural Science Foundation of China (51873148, 61674116 and 51633006), the Ministry of Science and Technology of China (2016YFA0202302) and the Natural Science Foundation of Tian** (18JC-YBJC18400).

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Contributions

Li R and Hu W conceived the idea and directed the project. Liu X carried out most of the experiments. Zhang Y performed some OFETs measurements. Zhang X performed the XRD measurements. Liu X and Li R wrote the paper. All authors analyzed the experimental results and contributed to the discussion.

Corresponding author

Correspondence to Rong** Li  (**荣金).

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The authors declare no conflict of interest.

Supplementary information

Experimental details and supporting data are available in the online version of the paper

Xuanyu Liu obtained her bachelor degree from Zhengzhou University in 2017. She is currently a graduate student in the School of Science, Tian** University. Her main research interests are the solution processing of OSCs and their optoelectronic properties.

Rong** Li is a Professor of Tian** University. He received his PhD from the Institute of Chemistry, Chinese Academy of Sciences (CAS) in 2009 supervised by Prof. Wen** Hu. His research interests include OSCs, two dimensional molecular crystals and organic optoelectronic devices.

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Liu, X., Zhang, Y., Zhang, X. et al. Continuous and highly ordered organic semiconductor thin films via dip-coating: the critical role of meniscus angle. Sci. China Mater. 63, 1257–1264 (2020). https://doi.org/10.1007/s40843-020-1297-7

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