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Enhancing back interfacial contact by in-situ prepared MoO3 thin layer for Cu2ZnSnSxSe4-x solar cells

原位制备MoO3薄膜提高铜锌锡硫硒太阳能电池背界面接触性能

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Abstract

In-situ prepared MoO3 thin layer has been introduced to suppress the formation of too thick Mo(S,Se)2 layer in Cu2ZnSnSxSe4-x (CZTSSe) solar cells. This MoO3 layer effectively improves the back interfacial contact between CZTSSe absorber layer and Mo substrate without poisoning the carrier transport. Up to 10.58% power conversion efficiency has been achieved.

Abstract

在空气中对钼基底进行退火处理, 在钼表面形成MoO3薄层. 该MoO3薄膜能有效抑制过厚Mo(S,Se)2的形成. 研究发现, MoO3厚度随着温度的升高而增大, 其中350°C形成的MoO3厚度最为合适, 既能够有效降低Mo(S,Se)2的厚度, 又不影响吸收层和钼电极接触, 器件最高效率达到10.58%. 这种方法不会引入其他杂质元素, 操作简单方便.

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Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (91733301, 51761145042, 51627803, 21501183, 51402348, 11474333, 91433205 and 51421002), the Knowledge Innovation Program and the Strategic Priority Research Program (Grant XDB 12010400) of the Chinese Academy of Sciences.

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Correspondence to Dongmei Li  (**冬梅) or Qingbo Meng  (孟庆波).

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Xue Min received her bachelor degree in the School of Optical and Electronic Information, Huazhong University of Science and Technology in 2015, and received her master degree in Institute of Physics (IOP), Chinese Academy of Sciences (CAS) in 2018. Her work mainly focused on develo** highly efficient Cu2ZnSnSxSe4-x solar cells and related materials.

Dongmei Li is a full professor at IOP, CAS. She received her PhD from Jilin University in 1999. In 2000, she was a postdoctoral fellow in Nihon University. From 2001 to 2003, she was a research associate in Cardiff University, UK. From 2003 to 2005, she worked in the College of Chemistry, Jilin University. Since 2005, she has been working in IOP. Her current research interest focuses on solar energy materials & devices, including new generation solar cells and photocatalytic materials. She has published over 170 papers, which were cited over 7,700 times (h-index 44), applied over 50 patents in which over 30 patents were authorized.

Qingbo Meng is currently a full professor at IOP, CAS, director of Center for Clean Energy, IOP. He received his PhD degree in 1997 from Changchun Institute of Applied Chemistry, CAS. From 1997 to 1999, he was a postdoctoral fellow in IOP. From 1999 to 2002, he was a STA Fellow (Science and Technology Agency of Japan) and Researcher of the University of Tokyo and KAST in Japan. He was selected as “Distinguished Young Scholars” from NSFC in 2007 and the project leader of the Fund for Creative Research Groups of China in 2014. He was awarded to “the Special Allowance of the State Council” in 2010 and “The president of the Tokyo University Science Award” in 2011. His current research interest focuses on solar energy materials & devices, including new generation thin film solar cells (such as perovskite solar cells, kesterite solar cells, quantum dot solar cells) and photocatalytic materials. He has published over 220 papers, which were cited over 8,600 times (h-index 55). He has applied over 80 patents, and over 50 patents were authorized.

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Min, X., Guo, L., Yu, Q. et al. Enhancing back interfacial contact by in-situ prepared MoO3 thin layer for Cu2ZnSnSxSe4-x solar cells. Sci. China Mater. 62, 797–802 (2019). https://doi.org/10.1007/s40843-018-9381-1

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