Abstract
To inhibit the graphitization of diamond under high temperature and low pressure, diamond/SiC composites were firstly fabricated by a rapid gaseous Si vacuum reactive infiltration process. The microstructure and graphitization behavior of diamond in the composites under various infiltration temperatures and holding time were investigated. The thermal conductivity of the resultant materials was discussed. The results show that the diamond-to-graphite transition is effectively inhibited at temperature of as high as 1600 °C under vacuum, and the substantial graphitization starts at 1700 °C. The microstructure of those ungraphitized samples is uniform and fully densified. The inhibition mechanisms of graphitization include the isolation of the catalysts from diamond by a series of protective layers, high pressure stress applied on diamond by the reaction-bonded SiC, and the moderate gas–solid reaction. For the graphitized samples, the boundary between diamond and SiC is coarse and loose. The graphitization mechanism is considered to be an initial detachment of the bilayers from the diamond surfaces, and subsequently flattening to form graphite. The ungraphitized samples present higher thermal conductivity of about 410 W·m−1·K−1 due to the fine interfacial structure. For the graphitized samples, the thermal conductivity decreases significantly to 285 W·m−1·K−1 as a result of high interfacial thermal resistance.
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References
Zweben C. Advanced thermal management materials for concentrator photovoltaic arrays. In: Proceedings of the High and Low Concentrator Systems for Solar Electric Applications. V San Diego, California, USA, 2010: 77690.
Tong XC. Thermally Conductive Ceramic Matrix Composites, Advanced Materials for Thermal Management of Electronic Packaging. New York: Springer; 2011. 277.
Guo H, Bai ZH, Zhang XM, Yin FZ, Jia CC, Han YY. Evolution of thermo-physical properties of diamond/Cu composite materials under thermal shock load. Rare Met. 2014;31(2):185.
Han YY, Guo H, Yin FZ, Zhang XM, Chu K, Fan YM. Microstructure and thermal conductivity of copper matrix composites reinforced with mixtures of diamond and SiC particles. Rare Met. 2012;31(1):58.
Uspenskaya K, Tormashev U, Fedoceev D. Oxidization and graphitization of diamond in condition of low pressure atmosphere. J Phys Chem. 1982;56(2):495.
Fedoseev DV, Vnukov SP, Bukhovets VL, Anikin BA. Surface graphitization of diamond at high temperatures. Surf Coat Technol. 1986;28(2):207.
Leparoux S, Diot C, Dubach A, Vaucher S. Synthesis of silicon carbide coating on diamond by microwave heating of diamond and silicon powder: a heteroepitaxial growth. Scripta Mater. 2007;57(7):595.
Unifantowicz P, Vaucher S, Lewandowska M, Kurzydłowski KJ. Mechanism of SiC crystals growth on 100 and 111 diamond surfaces upon microwave heating. Mater Charact. 2010;61(6):648.
Yang ZL, He XB, Zhang HM, Qu XH. Fabrication of diamond/SiC composites by PIP Process. Rare Met Mater Eng. 2011;40(S1):383.
Hong SM, Akaishi M, Yamaoka S. High-pressure synthesis of heat-resistant diamond composite using a diamond-TiC0.6 powder mixture. J Am Ceram Soc. 1999;82(9):2495.
Ko Y, Tsurumi T, Fukunaga O, Yano T. High pressure sintering of diamond-SiC composite. J Mater Sci. 2001;36(2):469.
Voronin G, Zerda T, Qian J, Zhao Y, He D, Dub S. Diamond-SiC nanocomposites sintered from a mixture of diamond and silicon nanopowders. Diam Relat Mater. 2003;12(9):1477.
Ekimov E, Gierlotka S, Gromnitskaya E, Kozubowski J, Palosz B, Lojkowski W, Naletov A. Mechanical properties and microstructure of diamond-SiC nanocomposites. Inorg Mater. 2002;38(11):1117.
Hozer L, Lee JR, Chiang YM. Reaction-infiltrated, net-shape SiC composites. Mater Sci Eng, A. 1995;195:131.
Butenko YV, Kuznetsov VL, Chuvilin AL, Kolomiichuk VN, Stankus SV, Khairulin RA, Segall B. Kinetics of the graphitization of dispersed diamonds at “low” temperatures. J Appl Phys. 2000;88(7):4380.
Qian J, Pantea C, Voronin G, Zerda T. Partial graphitization of diamond crystals under high-pressure and high-temperature conditions. J Appl Phys. 2001;90(3):1632.
Dando NR, Tadayyoni MA. Characterization of polyphasic silicon carbide using surface-enhanced Raman and nuclear magnetic resonance spectroscopy. J Am Ceram Soc. 1990;73(8):2242.
Pantea C, Qian J, Voronin G, Zerda T. High pressure study of graphitization of diamond crystals. J Appl Phys. 2002;91(4):1957.
Nakamura K, Kitajima M. Real-time Raman measurements of graphite under Ar+ irradiation. Appl Phys Lett. 1991;59(13):1550.
Fitzer E, Gadow R. Fiber-reinforced silicon carbide. Am Ceram Soc Bull. 1986;65(2):326.
Park JS, Sinclair R, Rowcliffe D, Stern M, Davidson H. Orientation relationship in diamond and silicon carbide composites. Diam Relat Mater. 2007;16(3):562.
Voronin G, Pantea C, Zerda T, Ejsmont K. Oriented growth of β-SiC on diamond crystals at high pressure. J Appl Phys. 2001;90(12):5933.
Shimono M, Kume S. HIP-sintered composites of C (diamond)/SiC. J Am Ceram Soc. 2004;87(4):752.
Wieligor M, Zerda TW. Surface stress distribution in diamond crystals in diamond-silicon carbide composites. Diam Relat Mater. 2008;17(1):84.
**e J, Chen S, Tse J, de Gironcoli S, Baroni S. High-pressure thermal expansion, bulk modulus, and phonon structure of diamond. Phys Rev B. 1999;60(13):9444.
Weast R. Handbook of Chemistry and Physics—A Ready-Reference Book of Chemical and Physical Data. 55th ed. Cleveland: CRC Press; 1974. 1357.
Varela-Feria FM, Ramírez-Rico J, de Arellano-López AR, Martínez-Fernández J, Singh M. Reaction-formation mechanisms and microstructure evolution of biomorphic SiC. J Mater Sci. 2008;43(3):933.
Herrmann M, Matthey B, Höhn S, Kinski I, Rafaja D, Michaelis A. Diamond-ceramics composites—new materials for a wide range of challenging applications. J Eur Ceram Soc. 2012;32(9):1915.
Davies G, Evans T. Graphitization of diamond at zero pressure and at a high pressure, In: Proceedings of the Royal Society of London Series A, London, 1972, 328(1574):413.
De Vita A, Galli G, Canning A, Car R. A microscopic model for surface-induced diamond-to-graphite transitions. Nature. 1996;379(6565):523.
Yang ZL, He XB, Wu M, Zhang L, Ma A, Liu RJ, Hu HF, Zhang YD, Qu XH. Fabrication of diamond/SiC composites by Si-vapor vacuum reactive infiltration. Ceram Int. 2013;39(3):3399.
Yang Z, He X, Wu M, Zhang L, Ma A, Liu R, Hu H, Zhang Y, Qu X. Infiltration mechanism of diamond/SiC composites fabricated by Si-vapor vacuum reactive infiltration process. J Eur Ceram Soc. 2013;33(4):869.
Zhu C, Lang J, Ma N. Preparation of Si–diamond–SiC composites by in situ reactive sintering and their thermal properties. Ceram Int. 2012;38(8):6131.
Acknowledgments
This work was financially supported by the National Natural Science Foundation of China (No. 51274040), the State Basic Research Development Program of China (No. 2011CB606306), and the Fundamental Research Funds for the Central Universities (No. FRF-TP-10-003B).
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Yang, ZL., Wang, LG., Wang, LM. et al. Microstructure and graphitization behavior of diamond/SiC composites fabricated by vacuum vapor reactive infiltration. Rare Met. 34, 400–406 (2015). https://doi.org/10.1007/s12598-014-0361-9
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DOI: https://doi.org/10.1007/s12598-014-0361-9