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Tuning the band gap of the CIGS solar buffer layer Cd1−xZnxS (x=0–1) to achieve high efficiency

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Abstract

To evaluate the impact of zinc sulfate (ZnSO4) concentration on the structural properties of the films, Cd1−xZnxS thin films were formed on glass substrates using chemical bath deposition (CBD) in this study. The effect of ZnSO4 precursor concentration on the surface morphology, optical properties, and morphological structure of the Cd1−xZnxS films was investigated. To study the impact of zinc do** content on the performance metrics of Cu(In1−xGax)Se2 (CIGS) cells in the experimental group and to improve the buffer layer thickness, simulations were run using one-dimensional solar cell capacitance simulator (SCAPS-1D) software.

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Authors and Affiliations

  1. Institute of New Energy Intelligence Equipment, School of Integrated Circuit Science and Engineering, Tian** University of Technology, Tian**, 300384, China

    Zhiyuan Tan, Yuming Xue, Hongli Dai, Luoxin Wang, **aofeng Hu & **n Bai

Authors
  1. Zhiyuan Tan
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  2. Yuming Xue
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  3. Hongli Dai
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  4. Luoxin Wang
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  5. **aofeng Hu
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  6. **n Bai
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Corresponding author

Correspondence to Yuming Xue.

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The authors declare no conflict of interest.

Additional information

This work has been supported by the Science and Technology Innovation Development Program (No.70304901).

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Tan, Z., Xue, Y., Dai, H. et al. Tuning the band gap of the CIGS solar buffer layer Cd1−xZnxS (x=0–1) to achieve high efficiency. Optoelectron. Lett. 20, 100–106 (2024). https://doi.org/10.1007/s11801-024-2222-6

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  • DOI: https://doi.org/10.1007/s11801-024-2222-6

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