Abstract
Fluorine doped tin oxide SnO2:F thin films were prepared by the spray pyrolysis (SP) technique on glass substrates by using SnCl2·2H2O as a precursor and NH4F and HF as do** compounds. A comparison between the properties of the films obtained by using the two do** compounds was performed by using I–V characteristics in the dark at room temperature, AC measurements, and transmittance. It is found that the films prepared by using HF have smaller resistivity, lower impedance and they are less capacitive than films prepared by using NH4F. In addition, these films have higher transmittance, higher optical bandgap energy and narrower Urbach tail width. These results are interesting for the use of SnO2:F as forecontact in CdS/CdTe solar cells.
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Ikhmayies, S.J., Ahmad-Bitar, R.N. Using HF rather than NH4F as do** source for spray-deposited SnO2:F thin films. J. Cent. South Univ. Technol. 19, 791–796 (2012). https://doi.org/10.1007/s11771-012-1073-7
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DOI: https://doi.org/10.1007/s11771-012-1073-7