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Characterization of the CH4/H2/Ar high density plasma etching process for HgCdTe

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Abstract

High density plasma etching of mercury cadmium telluride using CH4/H2/Ar plasma chemistries is investigated. Mass spectrometry is used to identify and monitor etch products evolving from the surface during plasma etching. The identifiable primary etch products are elemental Hg, TeH2, and Cd(CH3)2. Their relative concentrations are monitored as ion and neutral fluxes (both in intensity and composition), ion energy and substrate temperature are varied. General insights are made into surface chemistry mechanisms of the etch process. These insights are evaluated by examining etch anisotropy and damage to the remaining semiconductor material. Regions of process parameter space best suited to moderate rate, anisotropic, low damage etching of HgCdTe are identified.

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Author notes

  1. C. R. Eddy Jr.

    Present address: Electrical and Computer Engineering Department, Boston University, 8 Saint Mary’s Street, 02215-2421, Boston, MA

Authors and Affiliations

  1. U.S. Naval Research Laboratory, 20375-5345, Washington DC

    C. R. Eddy Jr., D. Leonhardt, V. A. Shamamian, J. R. Meyer, C. A. Hoffman & J. E. Butler

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  1. C. R. Eddy Jr.
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  2. D. Leonhardt
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  3. V. A. Shamamian
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  4. J. R. Meyer
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  5. C. A. Hoffman
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Eddy, C.R., Leonhardt, D., Shamamian, V.A. et al. Characterization of the CH4/H2/Ar high density plasma etching process for HgCdTe. J. Electron. Mater. 28, 347–354 (1999). https://doi.org/10.1007/s11664-999-0231-7

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  • DOI: https://doi.org/10.1007/s11664-999-0231-7

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