Abstract
Trisdimethylaminoarsine was used in atmospheric-pressure metalorganic chemical vapor deposition growth of ZnSe on GaAs. The metalorganic precursors employed for ZnSe growth were diethylzinc and diethylselenide, and ethyliodide was used as then-type dopant. P-on-n light emitting diode (LED) structures were prepared, and molecular beam epitaxially deposited HgTe layers were used as ohmic contacts to the p-type ZnSe. Blue LEDs were fabricated on p-on-n samples. Preliminary LED data and the material characterization data are presented.
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Bevan, M.J., Shih, H.D., Dodge, J.A. et al. Preparation of ZnSe light-emitting diodes by metalorganic chemical vapor deposition using trisdimethylaminoarsine as a p-type do** source. J. Electron. Mater. 27, 769–771 (1998). https://doi.org/10.1007/s11664-998-0051-1
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DOI: https://doi.org/10.1007/s11664-998-0051-1